TYN816RG STMicroelectronics

TYN816RG electronic component of STMicroelectronics
TYN816RG STMicroelectronics
TYN816RG SCRs
TYN816RG  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of TYN816RG SCRs across the USA, India, Europe, Australia, and various other global locations. TYN816RG SCRs are a product manufactured by STMicroelectronics. We provide cost-effective solutions for SCRs, ensuring timely deliveries around the world.

Part No. TYN816RG
Manufacturer: STMicroelectronics
Category: SCRs
Description: Thyristor; 800V; 10A; 16A; 25mA; Package: tube; THT; TO220AB
Datasheet: TYN816RG Datasheet (PDF)
Price (USD)
328: USD 0.793 ea
Line Total: USD 260.1 
Availability : 709
  
Ship by Fri. 03 Oct to Thu. 09 Oct
QtyUnit Price
328$ 0.793
332$ 0.7851
349$ 0.7466
500$ 0.6718
1000$ 0.5986
2000$ 0.5829
5000$ 0.5455
10000$ 0.5375

Availability 202
Ship by Wed. 01 Oct to Fri. 03 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 2.114
10$ 1.19
18$ 1.092
25$ 1.078
50$ 1.008


Availability 709
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 328
Multiples : 1
QtyUnit Price
328$ 0.793
332$ 0.7851
349$ 0.7466
500$ 0.6718
1000$ 0.5986
2000$ 0.5829
5000$ 0.5455
10000$ 0.5375


Availability 1940
Ship by Fri. 03 Oct to Thu. 09 Oct
MOQ : 1000
Multiples : 1000
QtyUnit Price
1000$ 0.6779
2000$ 0.6711
5000$ 0.6204
10000$ 0.608

   
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
Off-State Leakage Current @ VDRM IDRM
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Mounting Style
Package / Case
Packaging
Series
Breakover Current IBO Max
Vf - Forward Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TYN816RG from our SCRs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TYN816RG and other electronic components in the SCRs category and beyond.

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TN1625 TYN616, TYN816 16 A standard SCRs Features A I =16 A T(RMS) G V /V = 600 to 1000 V DRM RRM K I = 25 mA GT Description A A The standard TN16 / TYNx16 16 A SCRs series is suitable for general purpose applications. Using clip assembly technology, they provide a K A K superior performance in surge current A G G capabilities. 2 D PAK TO-220AB (TN1625-x00G) (TYNx16RG) Table 1. Device summary TN1625-600G TN1625-1000G Parameter Unit TYN616RG TYN816RG V /V 600 800 1000 V DRM RRM Sensitivity 25 25 25 mA November 2007 Rev 6 1/9 www.st.com 9Characteristics TN1625, TYN616, TYN816 1 Characteristics Table 2. Absolute ratings (limiting values) Symbol Parameter Value Unit I RMS on-state current (180 Conduction angle) T = 110 C 16 A T(RMS) c I Average on-state current (180 Conduction angle) T = 110 C 10 A T(AV) c t = 8.3 ms 200 p I Non repetitive surge peak on-state current T = 25 C A TSM j t = 10 ms 190 p 2 2 2 ItI t Value for fusing t = 10 ms T = 25 C 180 A S p j Critical rate of rise of on-state current dI/dt F = 60 Hz T = 125 C 50 A/s j I = 2 x I , t 100 ns G GT r I Peak gate current t = 20 s T = 125 C 4 A GM p j P Average gate power dissipation T = 125 C 1 W G(AV) j T Storage junction temperature range - 40 to + 150 stg C T Operating junction temperature range - 40 to + 125 j V Maximum peak reverse gate voltage 5 V RGM Table 3. Electrical characteristics (T = 25 C, unless otherwise specified) j Symbol Test Conditions Value Unit MIN. 2 I mA GT V = 12 V R = 33 MAX. 25 D L V MAX. 1.3 V GT V V = V R = 3.3 k T = 125 C MIN. 0.2 V GD D DRM L j I I = 500 mA Gate open MAX. 40 mA H T I I = 1.2 x I MAX. 60 mA L G GT dV/dt V = 67 % V Gate open T = 125 C MIN. 500 V/s D DRM j V I = 32 A t = 380 s T = 25 C MAX. 1.6 V TM TM p j V Threshold voltage T = 125 C MAX. 0.77 V t0 j R Dynamic resistance T = 125 C MAX. 23 m d j T = 25 C 5A I j DRM V = V MAX. DRM RRM I T = 125 C 2 mA RRM j Table 4. Thermal resistance Symbol Parameter Value Unit R Junction to case (DC) 1.1 C/W th(j-c) 2 2 S = 01 cm D PAK 45 R Junction to ambient (DC) C/W th(j-a) TO-220AB 60 S = copper surface under tab 2/9

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN
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