Product Information

BAT43W RHG

BAT43W RHG electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers SOD-123 30V 0.2A Sch ottky Diode
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6105 ea
Line Total: USD 0.61

8244 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
6483 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BAT43W RHG
Taiwan Semiconductor

1 : USD 0.191
10 : USD 0.1329
100 : USD 0.0558
1000 : USD 0.0391
3000 : USD 0.0309
9000 : USD 0.0249
24000 : USD 0.0237
45000 : USD 0.0214
99000 : USD 0.019

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Product Type
Factory Pack Quantity :
Subcategory
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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Additional Infomation About Product

BAT42W/BAT43W Taiwan Semiconductor Small Signal Product Surface Mount, Switching Schottky Barrier Diode FEATURES - Low forward voltage drop - Surface mount device type - Moisture sensitivity level (MSL): 1 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-123 MECHANICAL DATA - Case: Bend lead SOD-123 small outline plastic package - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL BAT42W BAT43W UNIT Repetitive Peak Reverse Voltage V RRM Working Peak Reverse Voltage V 30 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 21 V R(RMS) Forward Continue Current (Note 1) I 200 mA FM Repetitive Peak Forward Current I 500 t 1.0s mA FM Non-Repetitive Peak Forward Surge Current t 1.0 ms I 4 A FSM Repetitive Peak Forward Surge Current I 500 mA FRM Power Dissipation (Note 1) P 200 mW d I =200mA 1.0 F I =2mA - 0.33 F Maximum Forward Voltage I =10mA V 0.40 - V F F I =15mA - 0.45 F I =50mA 0.65 - F Peak Reverse Current V =25V & T =25C I 500 nA R J R V =1V, f=1.0MHz Junction Capacitance C 10 pF R J Reverse Recovery Time (Note 2) t 5 ns rr Thermal Resistance Junction to Ambient (Note 1) R 625 C JA Operating Temperature Range T -55 to +125 C J Storage Temperature Range T -55 to +125 C STG Notes: 1. Valid provided that terminals are kept at ambient temperature. Notes: 2. Test conditions : I =10mA, I =10mA, R =100, I =1mA F R L RR Version: G1605BAT42W/BAT43W Taiwan Semiconductor Small Signal Product RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig.1 Typical Forward Characteristics Fig. 2 Typical Forward Characteristics 1000 100 100 10 BAT43W 10 1 BAT42W 0.1 0.01 1 10 100 1000 100 1000 Instantaneous Forward Voltage (mV) Forward Voltage (mV) Fig. 3 Typical Reverse Characteristics Fig. 4 Typical Reverse Characteristics 120 15.5 100 Fig. 4 14.5 line 1 80 BAT43W 13.5 60 line 2 12.5 BAT42W 40 11.5 20 10.5 9.5 0 10 100 1000 2 8 14 20 26 32 Reverse Voltage (mV) Reverse Voltage (V) Version: G1605 Instantaneous Forward Current (A) Reverse Leakage Current (nA) Forward Current (mA) Reverse Current (nA)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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