Product Information

BAT54C

BAT54C electronic component of Taiwan Semiconductor

Datasheet
Taiwan Semiconductor Schottky Diodes & Rectifiers 0.2A 30V DUAL CHIP

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

BAT54C
Taiwan Semiconductor

1 : USD 0.255
10 : USD 0.2252
100 : USD 0.1282
1000 : USD 0.0471
3000 : USD 0.0409
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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BAT54 / A / C / S Taiwan Semiconductor 200mA, 30V Schottky Barrier Diode FEATURES KEY PARAMETERS Fast switching speed PARAMETER VALUE UNIT Surface mound device type I 200 mA F Moisture sensitivity level: level 1, per J-STD-020 V 30 V RRM RoHS Compliant Halogen-free according to IEC 61249-2-21 I 600 mA FSM V at I = 100mA 1 V F F APPLICATIONS T 125 C J MAX Adapters Package SOT-23 For switching power supply Inverter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8.00mg (approximately) SOT-23 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAT54 BAT54A BAT54C BAT54S UNIT Marking code on the device KL1 KL2 KL3 KL4 Power dissipation P 200 mW D Repetitive peak reverse voltage V 30 V RRM Repetitive peak forward current I 300 mA FRM (tp1s 0.5) Forward current I 200 mA F Non-Repetitive peak forward surge current I 600 mA FSM t<1.0s Junction temperature range T -55 to +125 C J Storage temperature range T -55 to +125 C STG 1 Version: G2007 BAT54 / A / C / S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 500 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 0.1mA, T = 25C - 0.24 F J V I = 1mA, T = 25C - 0.32 F J V (1) Forward voltage per diode I = 10mA, T = 25C - 0.40 F J V V F I = 30mA, T = 25C - 0.50 F J V I = 100mA, T = 25C - 1.00 F J V Reverse voltage I = 100 A, T = 25C 30 - R J V V R (2) Reverse current rated V per diode V = 25 V, T = 25C - 2 R R J I A R Junction capacitance f = 1MHz, V = 1V - 10 R C pF J I = I = 10mA, F R Reverse recovery time - 5 t ns rr R = 100, I = 1mA L rr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING BAT5x RF SOT-23 3K / 7 Reel BAT5x RFG SOT-23 3K / 7 Reel Notes: 1. defines part no. from4 to4 2. means green compound (halogen-free) 2 Version: G2007

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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