Product Information

S1DB R5

S1DB R5 electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 1A,200V,Glass Pass SMB Rect

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1937 ea
Line Total: USD 1.19

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

S1DB R5
Taiwan Semiconductor

1 : USD 1.1937
10 : USD 0.9251
100 : USD 0.2099
500 : USD 0.1393
850 : USD 0.1064
1700 : USD 0.0826
9350 : USD 0.0736
24650 : USD 0.0686
49300 : USD 0.0627

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Product
Brand
Product Type
Factory Pack Quantity :
Subcategory
Hts Code
LoadingGif

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CREAT BY ART S1AB - S1MB 1.0AMP Surface Mount Rectifiers SMB/DO-214AA Features For surface mounted application Glass passivated junction chip Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: 260/10 seconds at terminals Green compound with suffix on packing code & prefix on datecode Mechanical Data Case: Molded plastic Terminal: Pure tin plated, lead free Polarity: Indicated by cathode band Packing: 12mm tape per EIA STD RS-481 Weight: 0.093 grams Ordering Information (example) Packing code Packing code Part No. Package Packing (Green) R5 R5G S1AB SMB 850 / 7 REEL Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. S1 S1 S1 S1 S1 S1 S1 Symbol Unit Parameter AB BB DB GB JB KB MB Maximum Repetitive Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 30 A FSM Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.1 V F 1 A Maximum Reverse Current Rated VR T =25 5 A I uA R T =125 50 A Typical Junction Capacitance (Note 2) 12 Cj pF O Typical Thermal Resistance R 30 jL C/W O Operating Temperature Range T - 55 to + 150 J C O T Storage Temperature Range - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:F13RATINGS AND CHARACTERISTIC CURVES (S1AB THRU S1MB) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 1.2 1 10 0.8 0.6 TA=125 1 0.4 RESISTIVE OR INDUCTIVE LOAD 0.2 0 0. 1 TA=75 0 25 50 75 100 12 5 150 o LEAD TEMPERATURE ( C) 0. 01 TA=25 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD SURGE 0. 001 CURRENT 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 8.3mS Single Half Sine Wave JEDEC Method 10 TA=25 1 1 10 100 FIG. 5 TYPICAL FORWARD CHARACTERISTICS NUMBER OF CYCLES AT 60 Hz 100 FIG. 4 TYPICAL JUNCTION CAPACITANCE 10 100 1 10 TA=25 TA=25 Pulse Width=300us f=1.0MHz 1% Duty Cycle Vsig=50mVp-p 1 0. 1 0. 01 0. 1 1 10 100 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 REVERSE VOLTAGE (V) FORWARD VOLTAGE (V) Version:F13 PEAK FORWARD SURGE URRENT (A) AVERAGE FORWARD CURRENT (A) CAPACITANCE (pF) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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