S1D F3G

S1A thru S1M Taiwan Semiconductor CREAT BY ART Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 40 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.1 V F 1 A 1 Maximum reverse current rated VR T =25 J I A R T =125 50 J Typical reverse recovery time (Note 2) 1.5 Trr s Typical junction capacitance (Note 3) Cj 12 pF Non-repetitive peak reverse avalanche E 5 mJ RSM energy at 25, I =1A, L=10mH AS R 27 30 JL O Typical thermal resistance C/W R 75 85 JA O Operating junction temperature range T - 55 to +175 C J O T Storage temperature range - 55 to +175 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1405026 Version: M14S1A thru S1M Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel S1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (S1A) to 1000V (S1M) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE S1M R3 S1M R3 S1M R3G R3 G Green compound S1M S1MHR3 H R3 AEC-Q101 qualified S1M RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 1.2 1 10 0.8 TJ=125 1 0.6 0. 1 0.4 TJ=75 RESISTIVE OR INDUCTIVE LOAD 0. 01 0.2 TJ=25 0 0. 001 0 255075 100 125 150 175 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) o LEAD TEMPERATURE ( C) FIG. 4 TYPICAL FORWARD CHARACTERISTICS FIG. 3 MAXIMUM NON-REPETITIVE FORWARD 100 SURGE CURRENT 100 8.3ms Single Half Sine Wave JEDEC Method 10 S1A-S1K 10 S1M 1 Pulse Width=300s 1% Duty Cycle 1 1 10 100 0. 1 NUMBER OF CYCLES AT 60 Hz 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 FORWARD VOLTAGE (V) Document Number: DS D1405026 Version: M14 PEAK FORWARD SURGE URRENT AVERAGE FORWARD CURRENT (A) (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)