Product Information

1SS403,H3F

1SS403,H3F electronic component of Toshiba

Datasheet
Toshiba Diodes - General Purpose, Power, Switching USC SW DIODE IFM=300mA

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0416 ea
Line Total: USD 124.8

8730 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
1 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

Stock Image

1SS403,H3F
Toshiba

1 : USD 0.0785
10 : USD 0.061
100 : USD 0.0505
1000 : USD 0.0493
3000 : USD 0.0451
9000 : USD 0.0398
24000 : USD 0.039
45000 : USD 0.039
99000 : USD 0.039

8730 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 3000
Multiples : 3000

Stock Image

1SS403,H3F
Toshiba

3000 : USD 0.0416
6000 : USD 0.0409
12000 : USD 0.0402
18000 : USD 0.0395
24000 : USD 0.0388

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Vf - Forward Voltage
Ir - Reverse Current
Series
Packaging
Pd - Power Dissipation
Brand
Maximum Diode Capacitance
Height
Length
Width
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
Taric
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1SS403 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS403 High Voltage Switching Applications Unit: mm AEC-Q101 Qualified (Note1) Two-pin small packages are suitable for higher mounting densities. Excellent in forward current and forward voltage characteristics : VF (2) = 0.90 V (typ.) Fast reverse recovery time : trr = 60 ns (max) Small total capacitance : CT = 1.5 pF (typ.) Note1: For detail information, please contact our sales. Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage V 250 V RM Reverse voltage V 200 V R Maximum (peak) forward current I 300 mA FM Average forward current I 100 mA O USC Surge current (10ms) I 2 A FSM JEDEC Power dissipation P (Note 4) 200 mW D JEITA TOSHIBA 1-1E1A T (Note 2) 150 j Junction temperature C Weight: 0.0045g (typ.) T (Note 3) 125 j T (Note 2) 55 to 150 stg Storage temperature range C T (Note 3) 55 to 125 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: For devices with the ordering part number ending in H3F(T. Note 3: For devices with the ordering part number in other than H3F(T. Note 4: Mounted on a glass epoxy circuit board of 20 mm 20 mm, Pad dimension of 4 mm 4 mm. Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit V I = 10 mA 0.72 1.0 F (1) F Forward voltage V V I = 100 mA 0.90 1.2 F (2) F I V = 50 V 0.1 R (1) R Reverse current A I V = 200 V 1.0 R (2) R Total capacitance C V = 0 V, f = 1 MHz 1.5 3.0 pF T R Reverse recovery time t I = 10 mA (Fig. 1) 10 60 ns rr F Start of commercial production 1998-10 2017-2021 2021-06-25 1 Toshiba Electronic Devices & Storage Corporation 1SS403 Fig.1 Reverse Recovery Time (t ) Test Circuit rr Equivalent Circuit (Top View) Marking 2017-2021 2021-06-25 2 Toshiba Electronic Devices & Storage Corporation

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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