Product Information

1SV277TPH3F

1SV277TPH3F electronic component of Toshiba

Datasheet
Varactor Diodes 10V C1=4.0-4.9pF

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4862 ea
Line Total: USD 0.4862

3091 - Global Stock
Ships to you between
Wed. 10 Apr to Fri. 12 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3034 - Global Stock


Ships to you between Wed. 10 Apr to Fri. 12 Apr

MOQ : 1
Multiples : 1

Stock Image

1SV277TPH3F
Toshiba

1 : USD 0.3979
10 : USD 0.2817
100 : USD 0.1276
1000 : USD 0.1024
3000 : USD 0.0954
9000 : USD 0.0816
24000 : USD 0.0805
45000 : USD 0.0748
99000 : USD 0.0725

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Capacitance
Vr - Reverse Voltage
Mounting Style
Termination Style
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Configuration
Packaging
Brand
Applications Frequency Range
Minimum Tuning Ratio
Factory Pack Quantity :
Tuning Ratio Test Condition
Height
Length
Series
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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1SV277 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 VCO for UHF Band Radio Unit: mm High capacitance ratio: C / C = 2.3 (typ.) 1V 4V Low series resistance: r = 0.42 (typ.) s Small package Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 10 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1E1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.004 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 10 V R R Reverse current I V = 10 V 3 nA R R Capacitance C V = 1 V, f = 1 MHz 4.0 4.5 4.9 pF 1V R Capacitance C V = 4 V, f = 1 MHz 1.85 2.0 2.35 pF 4V R Capacitance ratio C / C 2.0 2.3 1V 4V Series resistance r V = 1 V, f = 470 MHz 0.42 0.55 s R Marking Start of commercial production 1994-03 1 2014-03-01 1SV277 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 (Note)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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