Product Information

1SV279,H3F

Name: 1SV279,H3F
Brand: Toshiba
SKU: 1SV279H3F_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

1SV279,H3F electronic component of Toshiba

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Datasheet

Diodes - General Purpose, Power, Switching Variable Cap 15V 2.5 CT 16pF 0.2

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

4000: USD 0.08 ea
Line Total: USD 320

0 - Global Stock

MOQ: 4000 Multiples: 4000
Pack Size: 4000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Warehouse 1 Ships to you between Mon. 06 May to Fri. 10 May MOQ : 4000 Multiples : 4000 1SV279,H3F Toshiba	4000 : USD 0.3926 8000 : USD 0.3901 12000 : USD 0.3875 20000 : USD 0.385 24000 : USD 0.3825 28000 : USD 0.3799 40000 : USD 0.3772 100000 : USD 0.3746 200000 : USD 0.372

0 - Warehouse 2 Ships to you between Fri. 10 May to Tue. 14 May MOQ : 1 Multiples : 1 1SV279,H3F Toshiba	1 : USD 1.2686 10 : USD 0.5383 100 : USD 0.2226 500 : USD 0.147 1000 : USD 0.1129 4000 : USD 0.0973

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Additional Infomation About Product

1SV279 TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV279 VCO for V/UHF Band Radio Unit: mm High capacitance ratio: C / C = 2.5 (typ.) 2V 10V Low series resistance: r = 0.2 (typ.) s Useful for small size tuner. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 15 V R Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEDEC absolute maximum ratings. Please design the appropriate reliability upon reviewing the JEITA Toshiba Semiconductor Reliability Handbook (Handling TOSHIBA 1-1G1A Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, Weight: 0.0014 g (typ.) etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Reverse voltage V I = 1 A 15 V R R Reverse current I V = 15 V 3 nA R R Capacitance C V = 2 V, f = 1 MHz 14 16 pF 2V R Capacitance C V = 10 V, f = 1 MHz 5.5 6.5 pF 10V R Capacitance ratio C / C 2.0 2.5 2V 10V Series resistance r V = 5 V, f = 470 MHz 0.2 0.4 s R Marking Start of commercial production 1994-07 1 2014-03-01 1SV279 C (Ta) C (25) Note: = 100 (%) C C (25) 2 2014-03-01 CAPACITANCE CHANGE RATIO (%) (Note) C

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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