1SV314(TPL3,F) Toshiba

1SV314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SV314 VCO for UHF Band Radio Unit: mm z High Capacitance Ratio : C / C = 2.5 (Typ.) 0.5V 2.5V z Low Series Resistance : r = 0.35 (Typ.) s z Useful for Small Size Tuner Absolute Maximum Ratings (Ta = 25C) CHARACTERISTIC SYMBOL RATING UNIT Reverse Voltage V 10 V R Junction Temperature T 125 C j Storage Temperature Range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the absolute maximum ratings. JEITA Please design the appropriate reliability upon reviewing the TOSHIBA 11G1A Toshiba Semiconductor Reliability Handbook (Handling Weight:0.0014g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) CHARACTERISTIC SYMBOL TEST CONDITION MIN TYP. MAXUNIT Reverse Voltage V I = 1 A 10 V R R Reverse Current I V = 10 V 3 nA R R Capacitance C V = 0.5 V, f = 1 MHz 7.3 8.4 pF 0.5V R Capacitance C V = 2.5 V, f = 1 MHz 2.75 3.4 pF 2.5V R Capacitance Ratio C / C 2.4 2.5 0.5V 2.5V Series Resistance r V = 1 V, f = 470 MHz 0.35 0.45 s R Marking Start of commercial production 1998-06 1 2014-03-01 1SV314 2 2014-03-01