Product Information


MT3S16U(TE85L,F) electronic component of Toshiba

Transistors RF Bipolar RF 50mW 5.5dB 10V USM 60mA 2GHz

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.6349 ea
Line Total: USD 0.6349

307 - Global Stock
Ships to you between
Thu. 05 Oct to Mon. 09 Oct
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
307 - Global Stock

Ships to you between Thu. 05 Oct to Mon. 09 Oct

MOQ : 1
Multiples : 1
1 : USD 0.2848
10 : USD 0.2322
100 : USD 0.1521
1000 : USD 0.1063
3000 : USD 0.0925
9000 : USD 0.0828
24000 : USD 0.0792
45000 : USD 0.072
99000 : USD 0.0696

Product Category
RF Bipolar Transistors
Transistor Type
Transistor Polarity
Operating Frequency
4 GHz (typ)
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
5 V
Emitter- Base Voltage VEBO
2 V
Continuous Collector Current
60 mA
Pd - Power Dissipation
100 mW
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 125 C
Mounting Style
Package / Case
SC - 70 - 3
Factory Pack Quantity :
Collector- Base Voltage Vcbo
10 V
Dc Current Gain Hfe Max
Operating Temperature Range
- 55 C to + 125 C
Hts Code
Product Type
Rf Bipolar Transistors
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MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (C ) is flat. re : NF = 2.4dB (typ.) ( 2V, 5mA, 1 GHz) 2 : S = 4.5dB (typ.) ( 2V, 10mA, 1 GHz) 21e Marking 3 Type Name T 4 1.Base 2.Emitter 3.Collector 1 2 USM JEDEC JEITA SC-70 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-2E1A Characteristics Symbol Unit Rating Weight : 6 mg (Typ.) Collector-base voltage V 10 V CBO Collector-emitter voltage V 5 V CEO Emitter-base voltage V 2 V EBO Collector current I 60 mA C Base current I 10 mA B P 100 mW C Collector power dissipation P (Note.1) 180 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t)) Start of commercial production 2002-09 1 2014-03-01 MT3S16U Microwave Characteristics (Ta = 25C) Characteristics Symbol Condition Min Typ. MaxUnit Transition frequency f V = 3 V, I = 10 mA 2 4 GHz T CE C 2 S (1) V = 2 V, I = 10 mA, f = 1 GHz 4.5 21e CE C Insertion gain dB 2 S (2) V = 3 V, I = 30 mA, f = 1 GHz 3 5.5 21e CE C NF V = 2 V, I = 5 mA, f = 1GHz Noise figure CE C 2.4 3.2 dB Electrical Characteristics (Ta = 25C) Characteristics Symbol Condition Min Typ. MaxUnit I V = 5 V, I = 0 0.1 A Collector cut-off current CBO CB E I V = 1 V, I = 0 Emitter cut-off current 1 A EBO EB C h V = 1 V, I = 5 mA DC current gain 80 140 FE CE C C V = 1 V, I = 0, f = 1 MHz (Note.2) Reverse transfer capacitance re CB E 2.4 3 pF Note.2: C is measured with a three-terminal method using a capacitance bridge. re Caution This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage