MT3S16U TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S16U Unit: mm UHF Band Oscillator and Amplifier Applications fT is high and current dependability is excellent. The characteristic of Reverse transfer capacitance (C ) is flat. re : NF = 2.4dB (typ.) ( 2V, 5mA, 1 GHz) 2 : S = 4.5dB (typ.) ( 2V, 10mA, 1 GHz) 21e Marking 3 Type Name T 4 1.Base 2.Emitter 3.Collector 1 2 USM JEDEC JEITA SC-70 Absolute Maximum Ratings (Ta = 25C) TOSHIBA 2-2E1A Characteristics Symbol Unit Rating Weight : 6 mg (Typ.) Collector-base voltage V 10 V CBO Collector-emitter voltage V 5 V CEO Emitter-base voltage V 2 V EBO Collector current I 60 mA C Base current I 10 mA B P 100 mW C Collector power dissipation P (Note.1) 180 mW C Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note.1: The device is mounted on a FR4 board (20mm X 25mm X 1.55 mm (t)) Start of commercial production 2002-09 1 2014-03-01 MT3S16U Microwave Characteristics (Ta = 25C) Characteristics Symbol Condition Min Typ. MaxUnit Transition frequency f V = 3 V, I = 10 mA 2 4 GHz T CE C 2 S (1) V = 2 V, I = 10 mA, f = 1 GHz 4.5 21e CE C Insertion gain dB 2 S (2) V = 3 V, I = 30 mA, f = 1 GHz 3 5.5 21e CE C NF V = 2 V, I = 5 mA, f = 1GHz Noise figure CE C 2.4 3.2 dB Electrical Characteristics (Ta = 25C) Characteristics Symbol Condition Min Typ. MaxUnit I V = 5 V, I = 0 0.1 A Collector cut-off current CBO CB E I V = 1 V, I = 0 Emitter cut-off current 1 A EBO EB C h V = 1 V, I = 5 mA DC current gain 80 140 FE CE C C V = 1 V, I = 0, f = 1 MHz (Note.2) Reverse transfer capacitance re CB E 2.4 3 pF Note.2: C is measured with a three-terminal method using a capacitance bridge. re Caution This device is sensitive to electrostatic discharge. Ensure that tools and equipment are sufficiently grounded before handling. When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. 2 2014-03-01