2SC2714-O(TE85L,F) Toshiba

2SC2714 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2714 High Frequency Amplifier Applications Unit: mm FM, RF, MIX, IF Amplifier Applications Small reverse transfer capacitance: C = 0.7 pF (typ.) re Low noise figure: NF = 2.5dB (typ.) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 40 V CBO Collector-emitter voltage V 30 V CEO Emitter-base voltage V 4 V EBO Collector current I 20 mA C Base current I 4 mA B Collector power dissipation P 100 mW C S-MINI Junction temperature T 125 C j JEDEC TO-236 Storage temperature range T 55 to 125 C stg JEITA SC-59 Note: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-3F1A temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 12 mg (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Collector cut-off current I V = 40 V, I = 0 0.5 A CBO CB E Emitter cut-off current I V = 4 V, I = 0 0.5 A EBO EB C h FE DC current gain V = 6 V, I = 1 mA 40 200 CE C (Note) Reverse transfer capacitance C V = 6 V, f = 1 MHz 0.70 pF re CB Transition frequency f V = 6 V, I = 1 mA 550 MHz T CE C Collector-base time constant C rbb V = 6 V, I = 1 mA, f = 30 MHz 30 ps c CB E Noise figure NF 2.5 5.0 dB V = 6 V, I = 1 mA, f = 100 MHz, CC E Figure 1 Power gain G 17 23 dB pe Note: h classification R: 40 to 80, O: 70 to 140, Y: 100 to 200 FE Start of commercial production 1982-10 1 2014-03-01 2SC2714 L1: 0.8 mm silver plated copper wire, 4T, 10ID, 8 length Figure1 NF, G Test Circuit pe y Parameter (typ.) (1) Common emitter (V = 6 V, I = 1 mA, f = 100 MHz, Ta = 25C) CE E Characteristics Symbol Typ.Unit Input conductance g 2.9 mS ie Input capacitance C 10.2 pF ie Reverse transfer admittance y 0.33 mS re Phase angle of reverse transfer 90 re admittance Forward transfer admittance y 40 mS fe Phase angle of forward transfer 20 fe admittance Output conductance g 45 S oe Output capacitance C 1.1 pF oe (2) Common base (V = 6 V, I = 1 mA, f = 100 MHz, Ta = 25C) CE E Characteristics Symbol Typ.Unit Input conductance g 34 mS ib Input capacitance C 10 pF ib Reverse transfer admittance y 0.27 mS rb Phase angle of reverse transfer 105 rb admittance Forward transfer admittance y 34 mS fb Phase angle of forward transfer 165 fb admittance Output conductance g 45 S ob Output capacitance C 1.1 pF ob 2 2014-03-01