Product Information

2SJ668

2SJ668 electronic component of Toshiba

Datasheet
Transistor: P-MOSFET; unipolar; -60V; -5A; 20W; DPAK
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.4413 ea
Line Total: USD 882.6

0 - Global Stock
MOQ: 2000  Multiples: 2000
Pack Size: 2000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2000
Multiples : 2000

Stock Image

2SJ668
Toshiba

2000 : USD 0.4941

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Polarisation
Kind Of Package
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Additional Infomation About Product

The 2SJ668 part of Toshiba is a P-channel Power MOSFET with low on-resistance and a maximum drain source voltage of -30V. It has a drain current of 0.2A (max) and a fast switching speed. The gate charge of this MOSFET is relatively low compared to other types, making it well suited for switching applications. It is ideal for use in high side switch circuits, small relays, and motor drives. This MOSFET is also RoHS compliant, providing a more environmentally friendly option for manufacturers.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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