X-On Electronics has gained recognition as a prominent supplier of DF10G5M4N,LF ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. DF10G5M4N,LF ESD Suppressors / TVS Diodes are a product manufactured by Toshiba. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

DF10G5M4N,LF Toshiba

DF10G5M4N,LF electronic component of Toshiba
DF10G5M4N,LF Toshiba
DF10G5M4N,LF ESD Suppressors / TVS Diodes
DF10G5M4N,LF  Circuit Protection

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See Product Specifications
Part No. DF10G5M4N,LF
Manufacturer: Toshiba
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD Protection Diode
Datasheet: DF10G5M4N,LF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.1541 ea
Line Total: USD 462.3 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1541
6000 : USD 0.1525
9000 : USD 0.1509
12000 : USD 0.1494
15000 : USD 0.1479
24000 : USD 0.1465
30000 : USD 0.145
45000 : USD 0.1436
75000 : USD 0.1421

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 3000
Multiples : 3000
3000 : USD 0.1683
6000 : USD 0.1593
12000 : USD 0.1501
18000 : USD 0.1411
24000 : USD 0.1319

0
Ship by Tue. 03 Jun to Thu. 05 Jun
MOQ : 1
Multiples : 1
1 : USD 0.4467
10 : USD 0.3473
100 : USD 0.202
500 : USD 0.1591
1000 : USD 0.1284
3000 : USD 0.1113
9000 : USD 0.1034
24000 : USD 0.1034
45000 : USD 0.0988

0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 66
Multiples : 1
66 : USD 0.1912
100 : USD 0.1836

   
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the DF10G5M4N,LF from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DF10G5M4N,LF and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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DF10G5M4N ESD Protection Diodes Silicon Epitaxial Planar DF10G5M4NDF10G5M4NDF10G5M4NDF10G5M4N 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications ESD Protection Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1 : I/O 1 2 : I/O 2 3 : GND 4 : I/O 3 5 : I/O 4 6 : NC 7 : NC 8 : NC 9 : NC 10 : NC DFN10 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 )) aa aa Characteristics Symbol Note Rating Unit Electrostatic discharge voltage (IEC61000-4-2)(Contact) V (Note 1) 20 kV ESD Electrostatic discharge voltage (IEC61000-4-2)(Air) 20 Peak pulse power (tp = 8/20 s) P 30 W PK Peak pulse current (tp = 8/20 s) I (Note 2) 2 A PP Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: According to IEC61000-4-2. Note 2: According to IEC61000-4-5. Start of commercial production 2015-11 2015 Toshiba Corporation 2015-12-11 1 Rev.2.0DF10G5M4N 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa V : Working peak reverse RWM voltage V : Reverse breakdown voltage BR I : Reverse breakdown current BR I : Reverse current R V : Clamp voltage C I : Peak pulse current PP R : Dynamic resistance DYN Fig. Fig. 4.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Fig. Fig. 4.14.1 Definitions of Electrical Characteristics Definitions of Electrical Characteristics Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V 3.6 V RWM Reverse breakdown voltage V I = 1 mA 4.0 5.0 6.0 V BR BR Reverse current I V = 3.6 V 0.1 A R RWM Clamp voltage V (Note 1) I = 1 A 7.5 V C PP I = 2 A 10 15 PP Clamp voltage V (Note 2) I = 16 A 17 V C TLP I = 30 A 24 TLP Dynamic resistance R (Note 2) 0.5 DYN Total capacitance C (Note 3) V = 0 V, f = 1 MHz 0.2 0.3 pF t R Note 1: Based on IEC61000-4-5 8/20 s pulse. Note 2: TLP parameter: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using a least-squares fit of TLP characteristics at I between 8 A to 16 A. PP Note 3: Guaranteed by design. 2015 Toshiba Corporation 2015-12-11 2 Rev.2.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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