Product Information

DF3A6.2LFU,LF(B

DF3A6.2LFU,LF(B electronic component of Toshiba

Datasheet
ESD Suppressor Diode Zener Uni-Dir 5V 6.2Vbr 3-Pin USM T/R
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

358: USD 0.2564 ea
Line Total: USD 91.79

20370 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 358  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
16786 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 358
Multiples : 1
358 : USD 0.2582
500 : USD 0.2512
1000 : USD 0.2451
2500 : USD 0.2401

Read More Specifications

     
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Additional Infomation About Product

DF3A6.2LFU TOSHIBA Diodes for Protecting against ESD DF3A6.2LFU Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. The mounting of two devices on an ultra-compact package allows the number of parts and the mounting cost to be reduced. Low Terminal capacitance: C = 6.5 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature T 125 C j Storage temperature range T 55 to 125 C stg Note: Using continuously under heavy loads (e.g. the application of high JEDEC temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 1-2P1A operating temperature/current/voltage, etc.) are within the Weight: 0.006 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 5.9 6.2 6.5 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5 V 2.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.5 pF T R (between Cathode and Anode) Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8kV (Contact discharge) Criterion: No damage to device elements Start of commercial production 2003-02 1 2014-03-01 DF3A6.2LFU Marking Equivalent Circuit (top view) BU C V T R IZ - VZ 10 100 Ta = 25C Ta=25C f = 1 MHz 10 1 0.01 0 0.01 0.001 0 1 012 34 567 89 10 0 1 2 4 3 5 6 7 ZENER VOLTAGE VZ (V) REVERSE VOLTAGE VR (V) 2 2014-03-01 ZENER CURRENT IZ (mA) TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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