DF3A6.8UFU,LF Toshiba

DF3A6.8UFU TOSHIBA Diodes for Protecting against ESD DF3A6.8UFU ESD Protection Diode Unit: mm * This device is intended for electrostatic discharge (ESD) protection and should not be used for any other purpose, including the constant-voltage diode applications. Abusolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 100 mW Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum JEDEC ratings. JEITA Please design the appropriate reliability upon reviewing the Toshiba TOSHIBA 1-2P1A Semiconductor Reliability Handbook (Handling Weight: 6.0 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Reverse stand-off voltage V 5.0 V RWM Reverse voltage V I = 1 mA 5.3 6.8 V R R Reverse current I V = 5 V 0.5 A R RWM Total capacitance C 2.5 pF T V = 0 V, f = 1 MHz R (between Cathode and Anode) Forward stand-off voltage V 25 V F I = 1 mA F Marking Equivalent Circuit (top view) Start of commercial production 2007-11 1 2016-09-21 DF3A6.8UFU Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8kV (Contact discharge) Criterion: No damage to device elements 2 2016-09-21