Product Information

DF3A6.8FV(TPL3,Z)

DF3A6.8FV(TPL3,Z) electronic component of Toshiba

Datasheet
Diode Zener Dual Common Anode 6.8V 6% 150mW 3-Pin VESM T/R
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

503: USD 0.0744 ea
Line Total: USD 37.42

0 - Global Stock
MOQ: 503  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 503
Multiples : 1
503 : USD 0.0744

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
Vz - Zener Voltage
Voltage Tolerance
Configuration
Mounting Style
Pin Count
Rev Curr
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Knee Impedance
Package Type
LoadingGif

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Additional Infomation About Product

DF3A6.8FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8FV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD). 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 2 3 Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the parts and the mounting cost. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P* 150 mW 1.CATHODE1 Junction temperature T 150 C j 2.CATHODE2 VESM Storage temperature range T 55~150 C stg 3.ANODE JEDEC Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 0.0015 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5mm 0.45mm 0.45mm 0.4mm Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Zener voltage V I = 5 mA 6.4 6.8 7.2 V Z Z Dynamic impedance Z I = 5 mA 25 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0, f = 1MHz 45 pF T R (between Cathode and Anode) 1 2007-11-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 DF3A6.8FV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 30kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) 6.8 CT - VR 100 Ta=25C f=1MHz 10 02 468 REVERSE VOLTAGE VR (V) 2 2007-11-01 TOTAL CAPACITANCE CT (pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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