Product Information

DF3A6.8LFV,L3F

DF3A6.8LFV,L3F electronic component of Toshiba

Datasheet
ESD Suppressors / TVS Diodes ESD Low Capacitance Protection Diode
Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3246 ea
Line Total: USD 0.32

160737 - Global Stock
Ships to you between
Thu. 23 May to Mon. 27 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
241448 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1
1 : USD 0.2335
10 : USD 0.1587
100 : USD 0.0655
1000 : USD 0.0403
2500 : USD 0.0403
8000 : USD 0.0311
24000 : USD 0.0311
96000 : USD 0.0276

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Cd - Diode Capacitance
Package / Case
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD DF3A6.8LFV Product for Use Only as Protection against Electrostatic Unit: mm Discharge (ESD) 1.20.05 0.80.05 * This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage, including without limitation, the constant voltage diode application. 1 2 The mounting of two devices in an ultra-compact package enables a 3 reduction in the number of parts and in the mounting cost. Low terminal capacitance: C = 6.0 pF (typ.) T Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 1. CATHODE1 Power dissipation P 150* mW VESM 2. CATHODE2 Junction temperature T 150 C j 3. ANODE Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the TOSHIBA 1-1Q1B reliability significantly even if the operating conditions (i.e. Weight: 1.5 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). *: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt) 0.5mm 0.45mm 0.45mm Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Zener voltage V I = 5 mA 6.5 6.8 7.1 V Z Z Dynamic impedance Z I = 5 mA 50 Z Z Reverse current I V = 5 V 0.5 A R R Terminal capacitance C V = 0 V, f = 1 MHz 6.0 pF T R (between cathode and anode) Start of commercial production 2005-05 1 2014-03-01 1.20.05 0.80.05 0.50.05 0.4 0.4 0.220.05 0.130.05 0.320.05 DF3A6.8LFV Guaranteed Level of ESD Immunity Test Condition ESD Immunity Level IEC61000-4-2 8 kV (Contact discharge) Criterion: No damage to device elements Marking Equivalent Circuit (top view) Q1 Q2 CU C V T R I V Z Z 10 100 m Ta = 25C f = 1 MHz 10 m 1 m 100 10 1 1 0 5 1 2 3 4 6 7 8 0 1 2 3 4 5 6 7 8 9 10 Reverse voltage V (V) R Zener voltage V (V) Z 2 2014-03-01 Zener current I (A) Z Total capacitance C (pF) T

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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