GT50J325
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT50J325
High Power Switching Applications
Unit: mm
Fast Switching Applications
Fourth generation IGBT
Enhancement mode type
Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: t = 0.05 s (typ.)
f
Low switching loss : E = 1.30 mJ (typ.)
on
: E = 1.34 mJ (typ.)
off
Low saturation Voltage: V = 2.0 V (typ.)
CE (sat)
FRD included between emitter and collector
Absolute Maximum Ratings (Ta = 25C)
Characteristics Symbol Rating Unit
Collector-emitter voltage V 600 V
CES
Gate-emitter voltage V 20 V
GES
DC I 50
C
Collector current A
1 ms I 100 JEDEC
CP
DC I 50
F
Emitter-collector forward
JEITA
A
current
1 ms I 100
FM
TOSHIBA 2-21F2C
Collector power dissipation
P 240 W
C
(Tc = 25C)
Weight: 9.75 g
Junction temperature T 150 C
j
Storage temperature range T 55 to 150 C
stg
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance (IGBT) R 0.521 C/W
th (j-c)
Thermal resistance (diode) R 2.30 C/W
th (j-c)
Equivalent Circuit Marking
Part No. (or abbreviation code)
Collector
TOSHIBA
GT50J325
Lot No.
Gate
JAPAN
A line indicates
Emitter
lead (Pb)-free package or
lead (Pb)-free finish.
1 2006-11-01 GT50J325
Electrical Characteristics (Ta = 25C)
Characteristics Symbol Test Condition Min Typ. MaxUnit
Gate leakage current I V = 20 V, V = 0 500 nA
GES GE CE
Collector cut-off current I V = 600 V, V = 0 1.0 mA
CES CE GE
Gate-emitter cut-off voltage V I = 5 mA, V = 5 V 3.5 6.5 V
GE (OFF) C CE
Collector-emitter saturation voltage V I = 50 A, V = 15 V 2.0 2.45 V
CE (sat) C GE
Input capacitance C V = 10 V, V = 0, f = 1 MHz 7900 pF
ies CE GE
Turn-on delay time t 0.09
d (on)
Rise time t 0.07
r
Turn-on time t 0.24
on
Inductive load
Switching time s
Turn-off delay time t V = 300 V, I = 50 A 0.30
d (off) CC C
V = +15 V, R = 13
GG G
Fall time t 0.05
f
(Note 1)
Turn-off time t 0.43
off
(Note 2)
Turn-on switching
E 1.30
on
loss
Switching loss mJ
Turn-off switching
E 1.34
off
loss
Peak forward voltage V I = 50 A, V = 0 4.2 V
F F GE
Reverse recovery time t I = 50 A, di/dt = 100 A/s 65 ns
rr F
Note 1: Switching time measurement circuit and input/output waveforms
V
GE
90%
10%
0
V
GE
I
L C
I V
C CC
90% 90%
R
G
V
CE
V 10% 10% 10% 10%
CE
0
t t
d (off) d (on)
t
f t
r
t t
off on
Note 2: Switching loss measurement waveforms
V
GE
90%
10%
0
I
C
V 5%
CE
0
E E
off on
2 2006-11-01