GT50JR21(STA1,E,S) Toshiba

GT50JR21(STA1,E,S) electronic component of Toshiba
GT50JR21(STA1,E,S) Toshiba
GT50JR21(STA1,E,S) IGBT Transistors
GT50JR21(STA1,E,S)  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of GT50JR21(STA1,E,S) IGBT Transistors across the USA, India, Europe, Australia, and various other global locations. GT50JR21(STA1,E,S) IGBT Transistors are a product manufactured by Toshiba. We provide cost-effective solutions for IGBT Transistors, ensuring timely deliveries around the world.

Part No. GT50JR21(STA1,E,S)
Manufacturer: Toshiba
Category: IGBT Transistors
Description: Transistor: IGBT; 600V; 49A; 230W; TO3PN
Datasheet: GT50JR21(STA1,E,S) Datasheet (PDF)
Price (USD)
1: USD 6.875 ea
Line Total: USD 6.88 
Availability : 115
  
Ship by Thu. 23 Oct to Mon. 27 Oct
QtyUnit Price
1$ 6.875
10$ 3.828
100$ 3.817
500$ 3.003

Availability 115
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 6.875
10$ 3.828
100$ 3.817
500$ 3.003


Availability 190
Ship by Thu. 23 Oct to Mon. 27 Oct
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 7
4$ 4.83
11$ 4.564
250$ 4.48
500$ 4.382

   
Manufacturer
Product Category
Power Dissipation
Kind Of Package
Mounting
Case
Type Of Transistor
Pulsed Collector Current
Turn-On Time
Turn-Off Time
Collector-Emitter Voltage
Collector Current
Gate-Emitter Voltage
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the GT50JR21(STA1,E,S) from our IGBT Transistors category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the GT50JR21(STA1,E,S) and other electronic components in the IGBT Transistors category and beyond.

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GT50JR21 Discrete IGBTs Silicon N-Channel IGBT GT50JR21GT50JR21GT50JR21GT50JR21 1. 1. 1. 1. ApplicationsApplicationsApplicationsApplications Dedicated to Current-Resonant Inverter Switching Applications Note: The product(s) described herein should not be used for any other application. 2. 2. FeaturesFeatures 2. 2. FeaturesFeatures (1) 6.5th generation (2) The RC-IGBT consists of a Freewheeling Diode(FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching IGBT : t = 0.08 s (typ.) (I = 50 A) f C FWD : t = 0.35 s (typ.) (I = 15 A) rr F (5) Low saturation voltage : V = 1.45 V (typ.) (I = 50 A) CE(sat) C (6) High junction temperature : T = 175 (max) j 3. 3. 3. 3. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Gate 2: Collector 3: Emitter TO-3P(N) Start of commercial production 2012-03 2014-01-07 1 Rev.2.0GT50JR21 4. 4. 4. 4. Absolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (TAbsolute Maximum Ratings (Note) (T = 25 = 25 = 25 = 25, unless otherwise specified), unless otherwise specified), unless otherwise specified), unless otherwise specified) aaaa Characteristics Symbol Rating Unit Collector-emitter voltage V 600 V CES Gate-emitter voltage V 25 GES Collector current (DC) (T = 25) I 50 A c C Collector current (DC) (T = 100) 49 c Collector current (1 ms) I 100 CP Diode forward current (DC) I 40 F Diode forward current (100 s) I 100 FP Collector power dissipation (T = 25) P 230 W c C Collector power dissipation (T = 100) 115 c Junction temperature (Note 1) T 175 j Storage temperature T -55 to 175 stg Mounting torque TOR 0.8 Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device with due consideration to the temperature rise of IGBT. Note 1: Ensure that the junction temperature does not exceed 175 . 5. 5. 5. 5. Thermal CharacteristicsThermal CharacteristicsThermal CharacteristicsThermal Characteristics Characteristics Symbol Max Unit Junction-to-case thermal resistance R 0.65 /W th(j-c) 2014-01-07 2 Rev.2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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