MSZ Series TOSHIBA Zener Diode Silicon Epitaxial Planar Type MSZ Series Applications Voltage surge protection Features Small package The typical voltage of VZ is accorded to E24 series Packaging and Internal Circuit Absolute Maximum Ratings 1 (Note) (Unless otherwise specified, Ta = 25C) Characteristics Symbol Rating Unit Power dissipation P 200 mW D *1 P 600 mW D Junction temperature T 150 C j Storage temperature T 55 to 150 C stg Absolute Maximum Ratings 2 (Note) (Unless otherwise specified, Ta = 25C) *2 *2 Electrostatic discharge voltage Electrostatic discharge voltage Type No. Peak pulse Peak pulse Type No. Peak pulse Peak pulse *3 *3 *3 *3 Contact Air power current Contact Air power current V (kV) P (W) I (A) V (kV) P (W) I (A) ESD PK PP ESD PK PP MSZ5V6 30 155 12 MSZ16V 30 200 5.5 MSZ6V2 30 175 11 MSZ20V 30 200 5 MSZ6V8 30 180 10 MSZ24V 30 200 4.5 MSZ8V2 30 200 8.5 MSZ30V 20 200 4 MSZ12V 30 200 7 MSZ36V 12 200 3 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). 2 *1: Mounted on a glass epoxy circuit board of 25.4 mm 25.4 mm, Cu pad: 645 mm *2: according to IEC61000-4-2 *3: according to IEC61000-4-5, tp = 8 / 20 s Start of commercial production 2020-07 2020 1 2020-10-26 Toshiba Electronic Devices & Storage Corporation MSZ Series MSZ series Electrical Characteristics (Unless otherwise specified, T = 25C) a Zener Voltage Dynamic Impedance Dynamic Clamp Total Reverse Current Type No. resistance voltage capacitance *1 *1*2 *3 V (V) Test Current Z () Test Current R () V (V) C (pF) I (A) Test Voltage Z Z DYN C t R IZ (mA) IZ (mA) VR (V) Min Typ. Max Max Typ. Typ. Typ. Max MSZ5V6 5.3 5.6 6.0 5 30 5 0.16 9 125 1 3.5 MSZ6V2 5.8 6.2 6.6 5 30 5 0.21 10 105 2.5 5.0 MSZ6V8 6.4 6.8 7.2 5 30 5 0.27 13 88 1.5 5.5 MSZ8V2 7.7 8.2 8.7 5 30 5 0.37 16.5 67 0.1 7 MSZ12V 11.4 12 12.6 5 30 5 0.7 26 44 0.1 10 MSZ16V 15.3 16 17.1 5 35 5 0.5 27 35 0.1 14 MSZ20V 18.8 20 21.2 5 70 5 0.35 30.5 29 0.1 17.6 MSZ24V 22.8 24 25.6 5 70 5 0.6 36.5 26 0.1 19 MSZ30V 28.0 30 32.0 2 100 2 1.25 47.5 21 0.1 27 MSZ36V 34.0 36 38.0 2 100 2 2.6 63 18 0.1 32.5 *1: TLP parameters: Z = 50 , t = 100 ns, t = 300 ps, averaging window: t = 30 ns to t = 60 ns, 0 p r 1 2 extraction of dynamic resistance using least squares fit of TLP characteristics between ITLP1 = 16 A and ITLP2 = 30 A. *2: ITLP = 16 A *3: VR = 0 V, f = 1 MHz Marking List Marking (MSZ5V6) Type No. Marking Type No. Marking MSZ5V6 ZLL MSZ16V ZM7 MSZ6V2 MSZ20V ZLM ZM9 ZLL MSZ6V8 ZLN MSZ24V ZMB MSZ8V2 MSZ30V ZLQ ZMD MSZ12V ZM4 MSZ36V ZMF Land Pattern Dimensions (for reference only) (Unit: mm) 2020 2 2020-10-26 Toshiba Electronic Devices & Storage Corporation