Product Information

TJ30S06M3L,LXHQ(O

Name: TJ30S06M3L,LXHQ(O
Brand: Toshiba
SKU: TJ30S06M3LLXHQO_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

TJ30S06M3L,LXHQ(O electronic component of Toshiba

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See Product Specifications
Datasheet

Transistor: P-MOSFET; unipolar; -60V; -30A; 68W; DPAK

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 2.9295 ea
Line Total: USD 2.93

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Global Stock Ships to you between Mon. 06 May to Fri. 10 May MOQ : 1 Multiples : 2000 TJ30S06M3L,LXHQ(O Toshiba	1 : USD 2.9295 3 : USD 1.827 38 : USD 0.7938

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Additional Infomation About Product

The TJ30S06M3L,LXHQ(O is a Power MOSFET produced by Toshiba. It is a unipolar transistor consisting of an N-channel and featuring a maximum drain-source voltage rating of -60V, a maximum drain current rating of -30A, and a power dissipation rating of 68 Watts. It is a DPAK-style package for surface mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Features Of Semiconductor Devices Esd Protected Gate Esd Protected Gate
Kind Of Package REEL , TAPE REEL , TAPE
Mounting Smd Smd
Case Dpak Dpak
Kind Of Channel Enhanced Enhanced
Polarisation Unipolar Unipolar
Type Of Transistor P - Mosfet P - Mosfet
On-State Resistance 16.8 mOhms 16.8 mOhms
Drain-Source Voltage - 60 V - 60 V
Drain Current - 30 A - 30 A
Gate-Source Voltage - 20 To 10 V - 20 To 10 V
Power Dissipation 68 W 68 W
Gate Charge 80 nC 80 nC