Product Information

SSM6J511NU,LF(T

Name: SSM6J511NU,LF(T
Brand: Toshiba
SKU: SSM6J511NULFT_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

SSM6J511NU,LF(T electronic component of Toshiba

Images are for reference only
See Product Specifications

Transistor: P-MOSFET; unipolar; -12V; -14A; 1.25W; uDFN6

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

5: USD 0.6476 ea
Line Total: USD 3.24

0 - Global Stock

MOQ: 5 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 5 Multiples : 1 SSM6J511NU,LF(T Toshiba	5 : USD 0.6476 10 : USD 0.4952 100 : USD 0.2746 500 : USD 0.2197 1000 : USD 0.1648 5000 : USD 0.1438

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 3 Multiples : 1 SSM6J511NU,LF(T Toshiba	3 : USD 0.364 25 : USD 0.2828 79 : USD 0.2058 215 : USD 0.1946

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Additional Infomation About Product

The SSM6J511NU,LF(T is a Toshiba manufactured unipolar P-MOSFET transistor. It has a -12V drain voltage and -14A drain current with a power rating of 1.25W. The package type is uDFN6.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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Manufacturer Toshiba Toshiba
Product Category MOSFET MOSFET
Kind Of Channel Enhanced Enhanced
Features Of Semiconductor Devices Esd Protected Gate Esd Protected Gate
Kind Of Package REEL , TAPE REEL , TAPE
Mounting Smd Smd
Case Udfn6 Udfn6
Polarisation Unipolar Unipolar
Type Of Transistor P - Mosfet P - Mosfet
Drain-Source Voltage - 12 V - 12 V
Drain Current - 14 A - 14 A
Gate-Source Voltage 10 V 10 V
On-State Resistance 19.2 mOhms 19.2 mOhms
Power Dissipation 1.25 W 1.25 W
Gate Charge 47 nC 47 nC