SSM6J502NU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS) SSM6J502NU Power Management Switch Applications Unit: mm 1.5V drive Low ON-resistance: R = 60.5 m (max) ( V = -1.5 V) DS(ON) GS R = 38.4 m (max) ( V = -1.8 V) DS(ON) GS R = 28.3 m (max) ( V = -2.5 V) DS(ON) GS R = 23.1 m (max) ( V = -4.5 V) DS(ON) GS Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage V 8 V GSS DC I 6 D Drain current A Pulse I (Note 1) 24 DP P (Note 2) 1 D Power dissipation W t 10s 2 Channel temperature T 150 C ch Storage temperature T 55 to 150 C stg 1,2,5,6: Drain Note: Using continuously under heavy loads (e.g. the application of 3: Gate high temperature/current/voltage and the significant change in 4: Source UDFN6B temperature, etc.) may cause this product to decrease in the JEDEC reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. TOSHIBA 2-2AA1A Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Weight: 8.5 mg (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The pulse width limited by max channel temperature. Note 2: Mounted on FR4 board. 2 (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking(Top View) Equivalent Circuit(Top View) Pin Condition(Top View) 6 5 4 6 5 4 6 5 4 SP2 Drain Source 2 3 1 2 3 1 132 Polarity marking Polarity marking (on the top) *Electrodes : on the bottom Start of commercial production 2010-11 1 2014-03-01 SSM6J502NU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. MaxUnit V I = -1 mA, V = 0 V -20 (BR) DSS D GS Drain-Source breakdown voltage V V I = -1 mA, V = 5 V (Note 4) -15 (BR) DSX D GS Drain cut-off current I V = -20 V, V = 0 V -1 A DSS DS GS Gate leakage current I V = 8 V, V = 0 V 1 A GSS GS DS Gate threshold voltage V V = -3 V, I = -1 mA -0.3 -1.0 V th DS D Forward transfer admittance Y V = -3 V, I = -2.0 A (Note 3) 8.8 17.5 S fs DS D I = -4.0 A, V = -4.5 V (Note 3) 18.2 23.1 D GS I = -4.0 A, V = -2.5 V (Note 3) 21.5 28.3 D GS Drainsource ON-resistance R m DS (ON) I = -2.5 A, V = -1.8 V (Note 3) 26.1 38.4 D GS I = -1.5 A, V = -1.5 V (Note 3) 29.7 60.5 D GS Input capacitance C 1800 iss Output capacitance V = -10 V, V = 0 V, f = 1 MHz pF C 205 oss DS GS Reverse transfer capacitance C 190 rss Total Gate Charge Q 24.8 g V = 10 V, I = 4.4 A DD D Gate-Source Charge Q 0.8 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 6.8 gd Turn-on time t V = -10 V, I = -1.5 A, 25 on DD D Switching time ns V = 0 to -2.5 V, R = 4.7 Turn-off time t 133 GS G off V Drain-Source forward voltage I = 4 A, V = 0 V (Note 3) 0.7 1.2 V DSF D GS Note 3: Pulse test Note 4: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drain-source breakdown voltage is lowered in this mode Switching Time Test Circuit (a) Test circuit (b) V IN 0 V 90% V = 10 V DD 0 OUT R = 4.7 10% G IN 2.5 V Duty 1% 2.5 V V : t , t < 5 ns IN r f V DS (ON) Common source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DD t t r f t t on off Precaution Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (-1 mA for the th D SSM6J502NU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G