SSM6K411TU TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6K411TU Power Management Switch Applications High-Speed Switching Applications Unit: mm 2.5-V drive 2.10.1 Low ON-resistanceR = 23.8 m (max) ( V = 2.5 V) DS(ON) GS 1.70.1 R = 14.3 m (max) ( V = 3.5 V) DS(ON) GS R = 12 m (max) ( V = 4.5 V) DS(ON) GS 1 6 2 5 Absolute Maximum Ratings (Ta = 25C) 3 4 Characteristic Symbol Rating Unit Drain-Source voltage V 20 V DSS Gate-Source voltage 12 V V GSS DC I (Note1) 10 D Drain current A Pulse I (Note1) 20 DP P (Note2) 1 D 1,2,5,6 Drain Power dissipation W t<10s 2 3 Gate UF6 4 Source Channel temperature T 150 C ch Storage temperature range T 55 to 150 C stg JEDEC Note: Using continuously under heavy loads (e.g. the application of high JEITA temperature/current/voltage and the significant change in TOSHIBA 2-2T1D temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 7.0 mg (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: The channel temperature should not exceed 150C during use. 2 Note 2: Mounted on an FR4 board. (25.4 mm 25.4 mm 1.6 mm, Cu Pad: 645 mm ) Marking Equivalent Circuit (top view) 65 4 6 5 4 KNI 123 1 2 3 Start of commercial production 2010-05 1 2014-03-01 2.00.1 1.30.1 0.70.05 0.65 0.65 0.1660.05 +0.1 0.3-0.05SSM6K411TU Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Conditions Min Typ. Max Unit V I = 10 mA, V = 0 V 20 (BR) DSS D GS Drain-Source breakdown voltage V V I = 10 mA, V = -12 V 8 (BR) DSX D GS Drain cut-off current I V = 20 V, V = 0 V 10 A DSS DS GS Gate leakage current I V = 12 V, V = 0 V 0.1 A GSS GS DS Gate threshold voltage V V = 3 V, I = 1 mA 0.5 1.2 V th DS D Forward transfer admittance Y V = 3 V, I = 2.0 A (Note 3) 6.5 13 S fs DS D I = 7.0 A, V = 4.5 V (Note 3) 8.7 12 D GS Drainsource ON-resistance R m I = 6.0 A, V = 3.5 V (Note 3) 10.5 14.3 DS (ON) D GS I = 4.0 A, V = 2.5 V (Note 3) 15.5 23.8 D GS Input capacitance C 710 iss V = 10 V, V = 0 V, f = 1 MHz pF Output capacitance C DS GS 240 oss Reverse transfer capacitance C 170 rss Total Gate Charge Q 9.4 g V = 10 V, I = 10 A DD D Gate-Source Charge Q 1.9 nC gs1 V = 4.5 V GS Gate-Drain Charge Q 4.1 gd Turn-on time t 32 on V = 10 V, I = 2 A DD D Switching time ns V = 0 to 2.5 V, R = 4.7 GS G Turn-off time t 23 off Drain-Source forward voltage V I = -10 A, V = 0 V (Note 3) -0.8 -1.2 V DSF D GS Note 3: Pulse test Switching Time Test Circuit (a) Test Circuit (b) V IN 2.5 V 90% V = 10 V DD 2.5 V OUT R = 4.7 G 10% IN 0 V Duty 1% 0 : t , t < 5 ns V IN r f V DD Common Source 90% 10 s (c) V Ta = 25C OUT 10% V DD V DS (ON) t t r f t t on off Notice on Usage Let V be the voltage applied between gate and source that causes the drain current (I ) to be low (1 mA for the th D SSM6K411TU). Then, for normal switching operation, V must be higher than V and V must be lower than GS(on) th, GS(off) V This relationship can be expressed as: V < V < V . th. GS(off) th GS(on) Take this into consideration when using the device. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. Thermal resistance R and power dissipation P vary depending on board material, board area, board thickness th (ch-a) D and pad area. When using this device, please take heat dissipation into consideration 2 2014-03-01 R G