TLP2768A(TP,E Toshiba

TLP2768A Photocouplers GaAAs Infrared LED & Photo IC TLP2768ATLP2768ATLP2768ATLP2768A 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Factory Networking High-Speed Digital Interfacing for Instrumentation and Control Devices I/O Interface Boards 2. 2. 2. 2. GeneralGeneralGeneralGeneral The Toshiba TLP2768A consists of a high-output GaAAs light-emitting diode coupled with integrated high gain, high-speed photodetectors. It is housed in a thin SO6L package of 2.3 mm(max). The TLP2768A has guaranteed the isolation voltage 5 kVrms and compliant with international safety standards for reinforced insulation. It guarantees operation at up to 125 and on supplies from 2.7 V to 5.5 V. The TLP2768A has an internal Faraday shield that provides a guaranteed common-mode transient immunity of 20 kV/s. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Inverter logic type (open collector output) (2) Package: SO6L (3) Operating temperature: -40 to 125 (4) Data transfer rate: 20 MBd (typ.) (NRZ) (5) Threshold input current: 5.0 mA (max) (6) Supply current: 4 mA (max) (7) Common-mode transient immunity: 20 kV/s (min) (8) Isolation voltage: 5000 Vrms (min) (9) Safety standards UL-approved: UL1577, File No.E67349 cUL-approved: CSA Component Acceptance Service No.5A File No.E67349 (Note 1) VDE-approved: EN60747-5-5, EN60065, EN60950-1, EN 62368-1 (Note 1)(Note 1)(Note 1) Option (D4) Note 1: When a VDE approved type is needed, please designate the Option (D4)Option (D4)Option (D4). Start of commercial production 2015-01 2015-2017 2017-12-26 1 Toshiba Electronic Devices & Storage Corporation Rev.9.0TLP2768A 4. 4. 4. 4. Packaging (Note)Packaging (Note)Packaging (Note)Packaging (Note) TLP2768A TLP2768A(LF4) 11-4N1A 11-4N101A Note: Lead forming option: (LF4) 5. Pin Assignment 5. 5. 5. Pin AssignmentPin AssignmentPin Assignment 1: Anode 2: N.C. 3: Cathode 4: GND (Emitter) 5: Output (Collector) 6: V CC 6. Internal Circuit (Note) 6. 6. 6. Internal Circuit (Note)Internal Circuit (Note)Internal Circuit (Note) Note: A 0.1-F bypass capacitor must be connected between pin 6 and pin 4. 2015-2017 2017-12-26 2 Toshiba Electronic Devices & Storage Corporation Rev.9.0