Product Information

TLP4176G(TP,F)

TLP4176G(TP,F) electronic component of Toshiba

Datasheet
MOSFET Output Optocouplers Photorelay Voff=350V Ion=0.15/0.12A

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

23: USD 1.6618 ea
Line Total: USD 38.22

2347 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 23  Multiples: 1
Pack Size: 1
Availability Price Quantity
1881 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 23
Multiples : 1
23 : USD 1.603
50 : USD 1.5148
100 : USD 1.3163
200 : USD 1.2559
500 : USD 1.2247
1000 : USD 1.1974

     
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TLP4176G TOSHIBA Photocoupler Photorelay TLP4176G PBX Unit: mm Telecommunication Modem FAX Cards, Modems In PC Measurement Instrumentation The TOSHIBA TLP4176GA consists of an infrared emitting diode optically coupled to a photo-MOSFET in a SOP, which is suitable for surface mount assembly. The TLP4176GA is suitable for the modem applications which require space savings. 4 pin SOP (2.54SOP4): 2.1 mm high, 2.54 mm pitch 1-form-B Peak off-state voltage: 350 V (min) Trigger LED current: 3 mA (max) On-state current: 120 mA (max) On-state resistance: 25 (max) Isolation voltage: 1500 Vrms (min) UL-recognized: UL 1577, File No.E67349 JEDEC JEITA Pin Configuration (top view) TOSHIBA 11-5H1 Weight: 0.1 g (typ.) 1 4 2 3 1: ANODE 2: CATHODE 3: DRAIN 4: DRAIN Start of commercial production 2001-04 2019 1 2019-06-24 Toshiba Electronic Devices & Storage Corporation TLP4176G Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current I 50 mA F Forward current derating I /C 0.5 mA/C F (Ta 25C) Peak forward current I 1 A FP (100 s pulse, 100 pps) Reverse voltage V 5 V R P 50 mW Diode power dissipation D Diode power dissipation derating P /C -0.5 mW/C D (Ta 25C) Junction temperature T 125 C j Off-state output terminal voltage V 350 V OFF On-state current I 120 mA ON On-state current derating I /C 1.2 mA/C ON (Ta 25C) Output power dissipation P 324 mW O Output power dissipation P / C 3.24 mW / C O derating (Ta 25C) Junction temperature T 125 C j Operating temperature range T 40 to 85 C opr Storage temperature range T 55 to 125 C stg Lead soldering temperature (10 s) T 260 C sol Isolation voltage BV 1500 Vrms S (AC, 60 s, R.H. 60 %) (Note 1) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). Note 1: Device considered a two-terminal device: LED side pins shorted together, and DETECTOR side pins shorted together. Recommended Operating Conditions Characteristics Symbol Min Typ. Max Unit Supply voltage V 280 V DD Forward current I 5 25 mA F On-state current I 120 mA ON Operating temperature T 20 65 C opr Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 2019 2 2019-06-24 Toshiba Electronic Devices & Storage Corporation Detector LED

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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