X-On Electronics has gained recognition as a prominent supplier of TPCA8047-H(T2L1,VM mosfet across the USA, India, Europe, Australia, and various other global locations. TPCA8047-H(T2L1,VM mosfet are a product manufactured by Toshiba. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

TPCA8047-H(T2L1,VM Toshiba

TPCA8047-H(T2L1,VM electronic component of Toshiba
Images are for reference only
See Product Specifications
Part No.TPCA8047-H(T2L1,VM
Manufacturer: Toshiba
Category:MOSFET
Description: MOSFET SOP-8-ADV PD=45W 1MHz PWR MOSFET TRNS
Datasheet: TPCA8047-H(T2L1,VM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 2.527
10 : USD 0.9494
100 : USD 0.717
500 : USD 0.609
1000 : USD 0.5
2500 : USD 0.467
5000 : USD 0.4466
10000 : USD 0.4306
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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TPCA8047-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8047-H Switching Regulator Applications Unit: mm Motor Drive Applications 0.4 0.1 1.27 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: Q = 13 nC (typ.) 1 SW A Low drain-source ON-resistance: R = 4.8 m (typ.) DS (ON) High forward transfer admittance: Y = 92 S (typ.) fs 5.0 0.2 Low leakage current: I = 10 A (max) (V = 40 V) DSS DS Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.5 mA) th DS D 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage V 40 V DSS Drain-gate voltage (R = 20 k) V 40 V DGR GS 8 5 Gate-source voltage V 20 V GSS DC (Note 1) I 32 D 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) I 96 DP JEDEC Drain power dissipation (Tc = 25 ) P 45 W D Drain power dissipation (t = 10 s) JEITA P 2.8 W D (Note 2a) TOSHIBA 2-5Q1A Drain power dissipation (t = 10 s) P 1.6 W D Weight: 0.069 g (typ.) (Note 2b) Single-pulse avalanche energy E 95 mJ AS (Note 3) Circuit Configuration Avalanche current I 32 A AR Repetitive avalanche energy 8 6 7 5 E 3.95 mJ AR (Tc = 25) (Note 4) T 150 C Channel temperature ch Storage temperature range T 55 to 150 C stg Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high 1 2 3 4 temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2008-10 1 2013-11-01 6.0 0.3 0.95 0.05 0.6 0.1 5.0 0.2 0.166 0.05 0.8 0.1 3.5 0.2 1.1 0.2TPCA8047-H Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 2.78 C/W th (ch-c) (Tc = 25) Thermal resistance, channel to ambient R 44.6 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 78.1 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) TPCA Part number 8047-H Lot No. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25C (initial), L = 100 H, R = 25 , I = 32 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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