X-On Electronics has gained recognition as a prominent supplier of TPCA8052-H(T2L1,VM MOSFET across the USA, India, Europe, Australia, and various other global locations. TPCA8052-H(T2L1,VM MOSFET are a product manufactured by Toshiba. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

TPCA8052-H(T2L1,VM Toshiba

TPCA8052-H(T2L1,VM electronic component of Toshiba
Images are for reference only
See Product Specifications
Part No.TPCA8052-H(T2L1,VM
Manufacturer: Toshiba
Category: MOSFET
Description: MOSFET SOP-8-ADV PD=45W 1MHz PWR MOSFET TRNS
Datasheet: TPCA8052-H(T2L1,VM Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 5000
Multiples : 5000
5000 : USD 0.8065
10000 : USD 0.7628
20000 : USD 0.7192
30000 : USD 0.6757
40000 : USD 0.6321
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1
1 : USD 2.9117
10 : USD 1.0874
100 : USD 0.8142
500 : USD 0.6721
1000 : USD 0.5257
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the TPCA8052-H(T2L1,VM from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPCA8052-H(T2L1,VM and other electronic components in the MOSFET category and beyond.

TPCA8052-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS -H) TPCA8052-H Switching Regulator Applications Unit: mm Motor Drive Applications 0.4 0.1 1.27 8 0.05 M A DC-DC Converter Applications 5 0.15 0.05 Small footprint due to a small and thin package High-speed switching 4 0.595 Small gate charge: Q = 6.8 nC (typ.) 1 SW A Low drain-source ON-resistance: R = 7.2 m (typ.) DS (ON) High forward transfer admittance: Y = 58 S (typ.) fs 5.0 0.2 Low leakage current: I = 10 A (max) (V = 40 V) DSS DS Enhancement mode: V = 1.3 to 2.3 V (V = 10 V, I = 0.2 mA) th DS D 0.05 S S 4 1 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit 4.25 0.2 Drain-source voltage V 40 V DSS Drain-gate voltage (R = 20 k) V 40 V DGR GS 8 5 Gate-source voltage V 20 V GSS DC (Note 1) I 20 D 1,2,3:SOURCE 4:GATE Drain current A 5,6,7,8:DRAIN Pulsed (Note 1) I 60 DP JEDEC Drain power dissipation (Tc = 25 ) P 30 W D Drain power dissipation (t = 10 s) JEITA P 2.8 W D (Note 2a) TOSHIBA 2-5Q1A Drain power dissipation (t = 10 s) P 1.6 W D (Note 2b) Weight: 0.069 g (typ.) Single-pulse avalanche energy E 37 mJ AS (Note 3) Avalanche current I 20 A Circuit Configuration AR Repetitive avalanche energy E 2.24 mJ AR 8 6 7 5 (Tc = 25) (Note 4) T 150 C Channel temperature ch Storage temperature range T 55 to 150 C stg Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in 1 2 3 4 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). This transistor is an electrostatic-sensitive device. Handle with care. Start of commercial production 2009-03 1 2013-11-01 6.0 0.3 0.95 0.05 0.6 0.1 5.0 0.2 0.166 0.05 0.8 0.1 3.5 0.2 1.1 0.2TPCA8052-H Thermal Characteristics Characteristic Symbol MaxUnit Thermal resistance, channel to case R 4.17 C/W th (ch-c) (Tc = 25) Thermal resistance, channel to ambient R 44.6 C/W th (ch-a) (t = 10 s) (Note 2a) Thermal resistance, channel to ambient R 78.1 C/W th (ch-a) (t = 10 s) (Note 2b) Marking (Note 5) TPCA Part number 8052-H Lot No. Note 1: Ensure that the channel temperature does not exceed 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 FR-4 25.4 25.4 0.8 25.4 25.4 0.8 (Unit: mm) (Unit: mm) (a) (b) Note 3: V = 24 V, T = 25 C (initial), L = 100 H, R = 25 , I = 20 A DD ch G AR Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: * Weekly code: (Three digits) Week of manufacture (01 for the first week of the year, continuing up to 52 or 53) Year of manufacture (The last digit of the year) 2 2013-11-01

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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