Product Information

TSA18N50MR

Name: TSA18N50MR
Brand: Truesemi
SKU: TSA18N50MR_Truesemi
Availability: OutOfStock
Rating: 5 (11 reviews)

TSA18N50MR electronic component of Truesemi

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Datasheet

MOSFET N Trench 500V 18A (Tc) 4V @ 250uA 310 mÎ© @ 9A,10V TO-3P RoHS

Manufacturer: Truesemi

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.58 ea
Line Total: USD 1.58

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Tue. 28 May to Fri. 31 May MOQ : 1 Multiples : 1 TSA18N50MR Truesemi	1 : USD 1.58 10 : USD 1.3122 30 : USD 1.1174 100 : USD 0.9567 500 : USD 0.9276 1000 : USD 0.9155

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Additional Infomation About Product

The TSA18N50MR is a TO-3P RoHS manufactured by Truesemi and is a N-channel MOSFET that is able to capable of switching up to 18A at 4V. The device has a maximum drain-source breakdown voltage of 500V with an on-state resistance of 310 mO at 9A, 10V. The maximum current trigger point is 250uA.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Truesemi

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Manufacturer Truesemi Truesemi
Product Category MOSFET MOSFET
Category MOSFET MOSFET
Rohs y y
Package TO - 3P TO - 3P
Brand Category Truesemi Truesemi
Fet Type n trench n trench
Drain To Source Voltagevdss 500 V 500 V
Continuous Drain Current Id @ 25°C 18 A (t C) 18 A (t C)
Vgsth Max @ Id 4v @ 250ua 4v @ 250ua
Rds On Max @ Id Vgs 310 m @ 9a,10v 310 m @ 9a,10v
Power Dissipation-Max Ta 235 W 235 W