Product Information

TSF16N60MR

TSF16N60MR electronic component of Truesemi

Datasheet
MOSFET N Trench 600V 16A (Tc) 5V @ 250uA 470 mΩ @ 8A,10V TO-220F RoHS
Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9306 ea
Line Total: USD 0.93

202 - Global Stock
Ships to you between
Mon. 13 May to Thu. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
28 - Global Stock


Ships to you between
Mon. 13 May to Thu. 16 May

MOQ : 1
Multiples : 1

Stock Image

TSF16N60MR
Truesemi

1 : USD 0.9647
10 : USD 0.8108
50 : USD 0.6156
100 : USD 0.5387
500 : USD 0.4933
1000 : USD 0.4695

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The TSF16N60MR is a MOSFET N-channel Trench 600V 16A (Tc) 5V @ 250uA 470 mO @ 8A,10V TO-220F RoHS manufactured by Truesemi. It is a high voltage switching transistor with a drain-to-source breakdown voltage rating of 600V. It has excellent switching performance with a peak current handling capability of 16A. The TSF16N60MR also features a low on-state resistance of 470mO and an avalanche energy rating of 5V @ 250uA. This transistor is RoHS compliant and is packaged in a TO-220F package. It is suitable for use in high power switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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