Product Information

TSF4N90M

TSF4N90M electronic component of Truesemi

Datasheet
MOSFET N Channel 900V 4A(Tc) 5V @ 250uA 4.2O @ 2A,10V TO-220F RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.66 ea
Line Total: USD 0.66

1929 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2506 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

TSF4N90M
Truesemi

1 : USD 0.6929
10 : USD 0.5882
50 : USD 0.5398
100 : USD 0.4855
500 : USD 0.4593
1000 : USD 0.4452

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Drain Source On Resistance Rdson@Vgs Id
Power Dissipation Pd
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The TSF4N90M is a MOSFET N Channel 900V 4A (Tc) 5V @ 250uA 4.2O @ 2A, 10V TO-220F RoHS manufactured by Truesemi. This MOSFET is a n-channel enhancement mode device designed specifically to improve switching performance over previous generations of MOSFETs. It features a low gate charge, fast switching speed, rugged avalanche characteristics and high current and breakdown voltage capabilities. It is available in the popular TO-220F package and is compliant to the RoHS directive for hazardous substances. The device is rated at 900V 4A (Tc) of current and is capable of operating at up to 10V of voltage. It has a fast switching speed at 250uA of gate charge and is capable of providing up to 4.2O of source-drain resistance at 2A of current. This makes it suitable for a variety of power switching applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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