CRST065N08N, CRSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m, 80A Features Product Summary V 85V Uses CRM(CQ) advanced SkyMOS1 technology DS Extremely low on-resistance R R 5.6m DS(on) DS(on) I Excellent Q xR product(FOM) 80A g DS(on) D Qualified according to JEDEC criteria Applications Motor control and drive 111111000000000000%%%%%% AAAAAAvvvvvvaaaaaallllllaaaaaannnnnncccccchhhhhheeeeee TTTTTTeeeeeesssssstttttteeeeeedddddd Battery management UPS (Uninterrupible Power Supplies) CRST065N08N CRSS063N08N Package Marking and Ordering Information Part Marking Package Packing Reel Size Tape Width Qty CRST065N08N - TO-220 Tube N/A N/A 50pcs CRSS063N08N - TO-263 Tube N/A N/A 50pcs Absolute Maximum Ratings Parameter Symbol Value Unit V Drain-source voltage 85 V DS Continuous drain current T = 25C (Silicon limit) 121 C I A D T = 25C (Package limit) 80 C T = 100C (Silicon limit) 77 C Pulsed drain current (T = 25C, t limited by T ) I 320 A C p jmax D pulse E Avalanche energy, single pulse (L=0.5mH, Rg=25) 110 mJ AS(Note 1) V Gate-Source voltage 20 V GS Power dissipation (T = 25C) P 164 W C tot T , T Operating junction and storage temperature -55...+150 C j stg . Notes:1.EAS is tested at starting Tj = 25, L = 0.5mH, IAS = 21A, VGS = 10V. IAS(max)=42A EAS(max)=441mJ under above Conditions China Resources Microelectronics (Chongqing) Limited Page 1CRST065N08N, CRSS063N08N ( ) SkyMOS1 N-MOSFET 85V, 5.6m, 80A Thermal Resistance Parameter Symbol Max Unit Thermal resistance, junction case. R 0.76 thJC C/W Thermal resistance, junction ambient(min. footprint) R 65 thJA Electrical Characteristic (at Tj = 25 C, unless otherwise specified) Value Symbol Parameter Unit Test Condition min. typ. max. Static Characteristic Drain-source breakdown BV 85 97 - V V =0V, I =250uA DSS GS D voltage Gate threshold voltage V 2 3 4 V V =V ,I =250uA GS(th ) DS GS D V =80V,V =0V DS GS Zero gate voltage drain I - 0.05 1 A T =25C DSS j current -- -- 55 TT ==112255CC jj Gate-source leakage I V =20V,V =0V - 10 100 nA GSS GS DS current V =10V, I =50A GS D Drain-source on-state R - 5.6 6.5 TO-220 DS(on) resistance m - 5.4 6.3 TO-263 g V =5V,I =40A Transconductance - 70 - S fs DS D Dynamic Characteristic C Input Capacitance - 2860 - iss V =0V, V =42.5V, C GS DS Output Capacitance - 790 - oss pF f=1MHz Reverse Transfer C - 19 - rss Capacitance Gate Total Charge Q - 47 - G V =10V, V =40V, GS DS Gate-Source charge Q - 13 - nC gs I =50A, f=1MHz D Q Gate-Drain charge - 11 - gd t Turn-on delay time - 16 - d(on) Vds=42.5V Id=10A t Rise time - 31 - r ns Rg=3.5 t Turn-off delay time - 36 - d(off) Vgs=10V (Note 2,3) t Fall time - 19 - f V =0V, V =0V, GGSS DDSS GGaattee rreessiissttaannccee RR -- 33..33 -- GG ff==11MMHHzz China Resources Microelectronics (Chongqing) Limited Page 2