Product Information

TSF65R190S2

TSF65R190S2 electronic component of Truesemi

Datasheet
MOSFET N Trench 650V 20A (Tc) 4V @ 250uA 190 mΩ @ 10A,10V TO-220F RoHS

Manufacturer: Truesemi
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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TSF65R190S2
Truesemi

N/A

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation Max
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The TSF65R190S2 with MOSFET N Trench is a device manufactured by Truesemi for use in power management applications. It is a 650V 20A (Tc ) 4V @ 250uA 190 mO @ 10A,10V, TO-220F RoHS compliant device. This device is a 20A Field-Effect Transistor (FET) which is used to switch power quickly and efficiently. It provides high current handling capabilities, low on-resistance, high speed switching performance, low noise, and low EMI noise immunity. It is suitable for switching applications in automotive, consumer electronics, and industrial controls. It also features Under Voltage Lock Out (UVLO) protection and Drain-Source Reverse Voltage protection.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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