Product Information

VS80N08AT

VS80N08AT electronic component of Vanguard

Datasheet
MOSFET N Trench 80V 83A (Tc) 4V @ 250uA 8 mΩ @ 40A,10V TO-220AB RoHS
Manufacturer: Vanguard
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.9721 ea
Line Total: USD 0.97

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Wed. 05 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1

Stock Image

VS80N08AT
Vanguard

1 : USD 0.9721
10 : USD 0.8239
30 : USD 0.7159
100 : USD 0.628
500 : USD 0.6129
1000 : USD 0.6053

Read More Specifications

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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Additional Infomation About Product

The VS80N08AT is a Trench Metal-Oxide Semiconductor Field Effect Transistor (MOSFET) with an N-channel constructed with Vanguard’s advanced and reliable Trench MOSFET technology. It is rated for an impressive 80V of drain-to-source voltage and 83A of drain current with a low 4V of total gate charge threshold and a low 8mO of on resistance. It is available in TO-220AB package complying with Restriction of Hazardous Substances (RoHS) rules and regulations and has a continuous current rating of 40A at 10V and a thermal resistance junction-to-case (Tc) of 250uA. This part can be used as a low voltage switch or a linear amplifier in various applications such as dc-dc converters, PFC, motor control, high-frequency SMPS, etc.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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