SI2319CDS-T1-GE3 VBsemi Elec

Name: SI2319CDS-T1-GE3
Brand: VBsemi Elec
SKU: SI2319CDST1GE3_VBsemi_Elec
Availability: InStock
Rating: 5 (11 reviews)

SI2319CDS-T1-GE3 electronic component of VBsemi Elec

Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI2319CDS-T1-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI2319CDS-T1-GE3 MOSFETs are a product manufactured by VBsemi Elec. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI2319CDS-T1-GE3
Manufacturer:	VBsemi Elec
Category:	MOSFETs
Description:	30V 5.6A 55mO@10V,4.4A 2.5W P Channel SOT-23 MOSFETs ROHS
Datasheet:	SI2319CDS-T1-GE3 Datasheet (PDF)

Price (USD)

5: USD 0.1848 ea
Line Total: USD 0.92

Availability : 577

Ship by Mon. 18 Aug to Thu. 21 Aug

Qty Unit Price
5 $ 0.1848
50 $ 0.149
150 $ 0.131
500 $ 0.0793
3000 $ 0.0632
6000 $ 0.0595

SI2319CDS-T1-GE3 More Buying Options & Price Grid(s)

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Availability

Price (USD)

Buy Price

Quantity

Availability 577

Ship by Mon. 18 Aug to Thu. 21 Aug

MOQ : 5
Multiples : 5

Qty Unit Price
5 $ 0.1848
50 $ 0.149
150 $ 0.131
500 $ 0.0793
3000 $ 0.0632
6000 $ 0.0595

Specifications

Manufacturer

VBsemi Elec VBsemi Elec

Product Category

MOSFETs MOSFETs

Category

MOSFET MOSFET

Rohs

y y

Package

SOT23 - 3 SOT23 - 3

Brand Category

Vbsemi Elec Vbsemi Elec

Drain Source Voltage Vdss

30 V 30 V

Continuous Drain Current Id

5.6 A 5.6 A

Drain Source On Resistance Rdson@Vgs Id

55 mOhms @10V , 4.4A 55 mOhms @10V , 4.4A

Power Dissipation Pd

2.5 W 2.5 W

Gate Threshold Voltage Vgsth@Id

2 V @250uA 2 V @250uA

Type

P Channel P Channel

Notes:- Show Stocked Products With Similar Attributes.

SI2319CDS-T1-GE3 Alternative Parts

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We are delighted to provide the SI2319CDS-T1-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2319CDS-T1-GE3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI2319CDS-T1-GE3 is a 30V 5.6A 55mO@10V,4.4A 2.5W P-Channel MOSFETs SOT-23 packaged MOSFET designed, manufactured, and sold by VBsemi Elec. The device is a Surface Mount Technology (SMT) component designed for surface mounting onto a PCB. It features current to voltage (I-V) performance with a maximum drain current of 5.6A, a low on-resistance of 55mO@10V, a maximum power dissipation of 2.5W, and a breakdown voltage of 30V. This device is compliant with the European Union (EU) RoHS (Restriction of Hazardous Substances) directive, and comes in a compact SOT-23 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Qty	Unit Price
5	$ 0.1848
50	$ 0.149
150	$ 0.131
500	$ 0.0793
3000	$ 0.0632
6000	$ 0.0595

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