Product Information

VBQF1310

VBQF1310 electronic component of VBsemi Elec

Datasheet
MOSFET N Channel 30V 30A 3V @ 250uA 10mO @ 30A,10V DFN8(3X3) RoHS

Manufacturer: VBsemi Elec
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.7995 ea
Line Total: USD 0.8

446 - Global Stock
Ships to you between
Fri. 17 May to Wed. 22 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
444 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

VBQF1310
VBsemi Elec

1 : USD 0.6902
10 : USD 0.5681
30 : USD 0.5168
100 : USD 0.4066
500 : USD 0.3409
1000 : USD 0.325

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta 25°C
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The VBQF1310 with MOSFET N Channel 30V 30A 3V @ 250uA 10mO @ 30A,10V DFN8(3X3) RoHS is an electronic component manufactured by VBsemi Elec. It is an N-channel Vertical D-MOSFET, featuring a low on-state resistance, high power density, low gate charge and fast switching speed. It provides an operating voltage of up to 30V and a maximum current of 30A. It is housed in a 3x3 DFN8 package with RoHS-compliant construction, and rated for a maximum junction temperature of 125 degrees Celsius. This component is suitable for a wide range of applications such as lighting control, motor control, home appliance control, power management, etc.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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