1N4150TAP

1N4150 www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diodes FEATURES Silicon epitaxial planar diode Low forward voltage drop AEC-Q101 qualified High forward current capability Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 APPLICATIONS DESIGN SUPPORT TOOLS click logo to get started High speed switch and general purpose use in computer and industrial applications Models Available MECHANICAL DATA Case: DO-35 (DO-204AH) Weight: approx. 125 mg Cathode band color: black Packaging codes / options: TR/10K per 13 reel (52 mm tape), 50K/box TAP/10K per ammopack (52 mm tape), 50K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4150 1N4150TR or 1N4150TAP 1N4150 Single Tape and reel / ammopack ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 50 V RRM Reverse voltage V 50 V R Peak forward surge current t = 1 s I 4A p FSM Average peak forward current I 600 mA FRM Forward continuous current I 300 mA F Average forward current V = 0 I 150 mA R F(AV) l = 4 mm, T = 45 C P 440 mW L tot Power dissipation l = 4 mm, T 25 C P 500 mW L tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Thermal resistance junction to ambient air l = 4 mm, T = constant R 350 K/W L thJA Junction temperature T 175 C j Storage temperature range T -65 to +175 C stg Rev. 1.9, 06-Jul-17 Document Number: 85522 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4150 www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.540 0.620 V F F I = 10 mA V 0.660 0.740 V F F Forward voltage I = 50 mA V 0.760 0.860 V F F I = 100 mA V 0.820 0.920 V F F I = 200 mA V 0.870 1 V F F V = 50 V I 100 nA R R Reverse current V = 50 V, T = 150 C I 100 A R j R V = 0 V, f = 1 MHz, R Diode capacitance C 2.5 pF D V = 50 mV HF I = I = (10 to 100) mA, F R Reverse recovery time t 4ns rr i = 0.1 x I , R = 100 R R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 100 1000 Scattering Limit 10 100 Scattering Limit 1 10 0.1 1 V = 50 V T = 25 C R J 0.01 0.1 0 40 80 120 160 200 0 0.4 0.8 1.2 1.6 2.0 94 9100 T - Junction Temperature (C) 94 9162 V - Forward Voltage (V) J F Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) Cathode Identicfi ation 26 min. 1.024 3.9 max. 0.154 26 min. 1.024 3.1 min. 0.120 Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 1.9, 06-Jul-17 Document Number: 85522 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Reverse Current (A) R 0.6 max. 0.024 0.4 min. 0.015 I - Forward Current (mA) F 1.7 0.067 1.3 0.050