1N4150W-E3-08

1N4150W www.vishay.com Vishay Semiconductors Small Signal Fast Switching Diode FEATURES Silicon epitaxial planar diode For general purpose and switching AEC-Q101 qualified available Base P/N-E3 - RoHS-compliant, commercial grade Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 click logo to get started DESIGN SUPPORT TOOLS Models Available MECHANICAL DATA Case: SOD-123 Weight: approx. 10.3 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS 1N4150W-E3-08 or 1N4150W-E3-18 1N4150W A4 Single Tape and reel 1N4150W-HE3-08 or 1N4150W-HE3-18 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage V 50 V RRM Maximum average forward rectified current I 200 mA F(AV) (1) Maximum power dissipation P 410 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 375 K/W thJA Maximum junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Valid provided that electrodes are kept at ambient temperature Rev. 1.5, 23-Feb-18 Document Number: 85720 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 1N4150W www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.540 0.620 V F F I = 10 mA V 0.660 0.740 V F F Forward voltage I = 50 mA V 0.760 0.860 V F F I = 100 mA V 0.820 0.920 V F F I = 200 mA V 0.870 1 V F F V = 50 V I 100 nA R R Reverse current V = 50 V, T = 150 C I 100 A R j R Diode capacitance V = 0, f = 1 MHz, V = 50 mV C 2.5 pF R HF D I = I = (10 to 100) mA F R Reverse recovery time t 4ns rr i = 0.1 x I , R = 100 R R L PACKAGE DIMENSIONS in millimeters (inches): SOD-123 0.45 (0.018) 0.25 (0.010) 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 0.85 (0.033) 3.85 (0.152) 2.5 (0.098) 3.55 (0.140) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Rev. 1.5, 23-Feb-18 Document Number: 85720 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 0 to 8 1.35 (0.053) 1 (0.039) 0.65 (0.026) 0.2 (0.008) 0.45 (0.018) 1.7 (0.067) 1.40 (0.055) 0.15 (0.006) 0.10 (0.004) 0.1 (0.004) max. 0.85 (0.033)