IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR310, SiHFR310) D Straight lead (IRFU310, SiHFU310) D G Available in tape and reel Available Fast switching Fully avalanche rated S G S D Material categorization: for definitions of compliance G S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the PRODUCT SUMMARY designer with the best combination of fast switching, V (V) 400 ruggedized device design, low on-resistance and DS cost-effectiveness. R ()V = 10 V 3.6 DS(on) GS The DPAK is designed for surface mounting using vapor Q max. (nC) 12 g phase, infrared, or wave soldering techniques. The straight Q (nC) 1.9 gs lead version (IRFU, SiHFU series) is for through-hole Q (nC) 6.5 gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFR310-GE3 SiHFR310TRL-GE3 SiHFR310TR-GE3 SiHFU310-GE3 Lead (Pb)-free and halogen-free SiHFR310TRR-GE3 IRFR310TRPbF-BE3 IRFR310TRLPbF-BE3 - a a Lead (Pb)-free IRFR310PbF IRFR310TRLPbF IRFR310TRPbF IRFU310PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 400 DS V Gate-source voltage V 20 GS T = 25 C 1.7 C Continuous drain current V at 10 V I GS D T = 100 C 1.1 A C a Pulsed drain current I 6.0 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 86 mJ AS a Repetitive avalanche current I 1.7 A AR a Repetitive avalanche energy E 2.5 mJ AR Maximum power dissipation T = 25 C 25 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 4.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 52 mH, R = 25 , I = 1.7 A (see fig. 12) DD J g AS c. I 1.7 A, dI/dt 40 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0771-Rev. E, 19-Jul-2021 Document Number: 91272 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -50 thJA a (PCB mounted, steady-state) C/W Maximum junction-to-ambient R - 110 thJA Maximum junction-to-case R -5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 400 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.47 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 1.0 A -- 3.6 DS(on) GS D b Forward transconductance g V = 50 V, I = 1.0 A 0.97 - - S fs DS D Dynamic Input capacitance C - 170 - iss V = 0 V, GS Output capacitance C -3V = 25 V, 4- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -6.3- rss Total gate charge Q -- 12 g I = 2.0 A, V = 320 V, D DS Gate-source charge Q --V = 10 V 1.9 nC gs GS b, c see fig. 6 and 13 Gate-drain charge Q --6.5 gd Turn-on delay time t -7.9 - d(on) V = 200 V, I = 2.0 A, DD D Rise time t -9.9 - r R = 24 , R = 95 , ns g D Turn-off delay time t -2 b, c 1- d(off) see fig. 10 Fall time t -11- f Gate input resistance R f = 1 MHz, open drain 1.7 - 11.2 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 1.7 S showing the A G integral reverse a Pulsed diode forward current I -- 6.0 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 240 540 ns rr b T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.85 1.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0771-Rev. E, 19-Jul-2021 Document Number: 91272 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000