X-On Electronics has gained recognition as a prominent supplier of IRFR310TRPBF-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFR310TRPBF-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFR310TRPBF-BE3 Vishay

IRFR310TRPBF-BE3 electronic component of Vishay
IRFR310TRPBF-BE3 Vishay
IRFR310TRPBF-BE3 MOSFETs
IRFR310TRPBF-BE3  Semiconductors

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See Product Specifications
Part No. IRFR310TRPBF-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET 400V N-CH
Datasheet: IRFR310TRPBF-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.275 ea
Line Total: USD 1.27 
Availability - 9564
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9564
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 1.275
10 : USD 0.8376
100 : USD 0.5995
250 : USD 0.5984
500 : USD 0.5214
1000 : USD 0.4367
2000 : USD 0.4356
4000 : USD 0.4169

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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We are delighted to provide the IRFR310TRPBF-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFR310TRPBF-BE3 and other electronic components in the MOSFETs category and beyond.

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IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR310, SiHFR310) D Straight lead (IRFU310, SiHFU310) D G Available in tape and reel Available Fast switching Fully avalanche rated S G S D Material categorization: for definitions of compliance G S please see www.vishay.com/doc 99912 N-Channel MOSFET DESCRIPTION Third generation power MOSFETs form Vishay provide the PRODUCT SUMMARY designer with the best combination of fast switching, V (V) 400 ruggedized device design, low on-resistance and DS cost-effectiveness. R ()V = 10 V 3.6 DS(on) GS The DPAK is designed for surface mounting using vapor Q max. (nC) 12 g phase, infrared, or wave soldering techniques. The straight Q (nC) 1.9 gs lead version (IRFU, SiHFU series) is for through-hole Q (nC) 6.5 gd mounting applications. Power dissipation levels up to 1.5 W Configuration Single are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFR310-GE3 SiHFR310TRL-GE3 SiHFR310TR-GE3 SiHFU310-GE3 Lead (Pb)-free and halogen-free SiHFR310TRR-GE3 IRFR310TRPbF-BE3 IRFR310TRLPbF-BE3 - a a Lead (Pb)-free IRFR310PbF IRFR310TRLPbF IRFR310TRPbF IRFU310PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 400 DS V Gate-source voltage V 20 GS T = 25 C 1.7 C Continuous drain current V at 10 V I GS D T = 100 C 1.1 A C a Pulsed drain current I 6.0 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 86 mJ AS a Repetitive avalanche current I 1.7 A AR a Repetitive avalanche energy E 2.5 mJ AR Maximum power dissipation T = 25 C 25 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 4.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V, starting T = 25 C, L = 52 mH, R = 25 , I = 1.7 A (see fig. 12) DD J g AS c. I 1.7 A, dI/dt 40 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0771-Rev. E, 19-Jul-2021 Document Number: 91272 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR310, IRFU310, SiHFR310, SiHFU310 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -50 thJA a (PCB mounted, steady-state) C/W Maximum junction-to-ambient R - 110 thJA Maximum junction-to-case R -5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 400 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.47 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 400 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 320 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 1.0 A -- 3.6 DS(on) GS D b Forward transconductance g V = 50 V, I = 1.0 A 0.97 - - S fs DS D Dynamic Input capacitance C - 170 - iss V = 0 V, GS Output capacitance C -3V = 25 V, 4- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -6.3- rss Total gate charge Q -- 12 g I = 2.0 A, V = 320 V, D DS Gate-source charge Q --V = 10 V 1.9 nC gs GS b, c see fig. 6 and 13 Gate-drain charge Q --6.5 gd Turn-on delay time t -7.9 - d(on) V = 200 V, I = 2.0 A, DD D Rise time t -9.9 - r R = 24 , R = 95 , ns g D Turn-off delay time t -2 b, c 1- d(off) see fig. 10 Fall time t -11- f Gate input resistance R f = 1 MHz, open drain 1.7 - 11.2 g D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous source-drain diode current I -- 1.7 S showing the A G integral reverse a Pulsed diode forward current I -- 6.0 SM S p - n junction diode b Body diode voltage V T = 25 C, I = 1.7 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 240 540 ns rr b T = 25 C, I = 2.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.85 1.6 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0771-Rev. E, 19-Jul-2021 Document Number: 91272 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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