IRLIZ14G www.vishay.com Vishay Siliconix Power MOSFET FEATURES D TO-220 FULLPAK Isolated package High voltage isolation = 2.5 kV (t = 60 s RMS f = 60 Hz) Sink to lead creepage distance = 4.8 mm G Logic-level gate drive R specified at V = 4 V and 5 V DS(on) GS SS S Fast switching DD G N-Channel MOSFET Ease of paralleling Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 PRODUCT SUMMARY V (V) 60 DESCRIPTION DS R ()V = 5.0 V 0.20 DS(on) GS Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, Q (Max.) (nC) 8.4 g ruggedized device design, low on-resistance and Q (nC) 3.5 gs cost-effectiveness. Q (nC) 6.0 gd The TO-220 FULLPAK eliminates the need for additional Configuration Single insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing. ORDERING INFORMATION Package TO-220 FULLPAK Lead (Pb)-free IRLIZ14GPbF ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted C PARAMETER SYMBOLLIMITUNIT 60 Drain-source voltage V DS V Gate-source voltage 10 V GS 8.0 T = 25 C C Continuous drain current V at 5.0 V I GS D 5.7 A T = 100 C C a Pulsed drain current 32 I DM 0.18 Linear derating factor W/C b 39.5 Single pulse avalanche energy E mJ AS 27 Maximum power dissipation T = 25 C P W C D c 4.5 Peak diode recovery dV/dt dV/dt V/ns Operating junction and storage temperature range -55 to +175 T , T J stg C d 300 Soldering recommendations (peak temperature) For 10 s 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 0.79 mH, R = 25 , I = 10 A (see fig. 12) DD J G AS c. I 10 A, dI/dt 90 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case S21-0473-Rev. C, 17-May-2021 Document Number: 91315 1 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRLIZ14G www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -65 thJA C/W Maximum junction-to-case (drain) R -5.5 thJC SPECIFICATIONS T = 25 C, unless otherwise noted J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-ssource breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.070 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-source leakage I V = 10 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 4.8 A - - 0.20 GS D Drain-source on-state resistance R DS(on) b V = 4.0 V I = 4.0 A - - 0.28 GS D b Forward transconductance g V = 25 V, I = 4.8 A 3.6 - - S fs DS D Dynamic Input capacitance C - 400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 170- oss DS pF f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -42- rss Drain to sink capacitance C f = 1.0 MHz - 12 - Total gate charge Q -- 8.4 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 5.0 V 3.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --6.0 gd Turn-on delay time t -9.3 - d(on) V = 30 V, I = 10 A, Rise time t DD D - 110 - r R = 12 R = 2.8 , ns G , D b Turn-off delay time t -17- d(off) see fig. 10 Fall time t -26- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 8.0 S showing the A integral reverse G a p - n junction diode Pulsed diode forward current I -- 32 SM S b Body diode voltage V T = 25 C, I = 8.0 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 65 130 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.33 0.65 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0473-Rev. C, 17-May-2021 Document Number: 91315 2 For technical questions, contact: hvmos.techsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000