PD- 94897 IRLMS6802PbF HEXFET Power MOSFET Ultra Low On-Resistance A 1 6 D D P-Channel MOSFET V = -20V Surface Mount DSS 2 5 D D Available in Tape & Reel Lead-Free 3 4 G S R = 0.050 DS(on) Top View Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R 60% DS(on) less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. The unique thermal design and R reduction DS(on) enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6 Parameter Max. Units V Drain- Source Voltage -20 V DS I T = 25C Continuous Drain Current, V -4.5V -5.6 D A GS I T = 70C Continuous Drain Current, V -4.5V -4.5 A D A GS I Pulsed Drain Current -45 DM P T = 25C Power Dissipation 2.0 D A P T = 70C Power Dissipation 1.3 D A Linear Derating Factor 0.016 W/C E Single Pulse Avalanche Energy 31 mJ AS V Gate-to-Source Voltage 12 V GS T T Junction and Storage Temperature Range -55 to + 150 C J, STG Thermal Resistance Parameter Max. Units R Maximum Junction-to-Ambient 62.5 C/W JA www.irf.com 1 1/18/05 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage -20 V V = 0V, I = -250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient -0.005 V/C Reference to 25C, I = -1mA (BR)DSS J D 0.050 V = -4.5V, I = -5.1A GS D R Static Drain-to-Source On-Resistance DS(on) 0.100 V = -2.5V, I = -3.4A GS D V Gate Threshold Voltage -0.60 -1.2 V V = V , I = -250A GS(th) DS GS D g Forward Transconductance 1.5 S V = -10V, I = -0.80A fs DS D -1.0 V = -16V, V = 0V DS GS I Drain-to-Source Leakage Current DSS -25 V = -16V, V = 0V, T = 125C DS GS J Gate-to-Source Forward Leakage -100 V = -12V GS Gate-to-Source Reverse Leakage 100 V = 12V GS Q Total Gate Charge 11 16 I = -4.5A g D Q Gate-to-Source Charge 2.2 3.3 nC V = -10V gs DS Q Gate-to-Drain Mille) Charge 2.9 4.3 V = -5.0V gd GS t Turn-On Delay Time 12 V = -10V d(on) DD t Rise Time 33 I = -1.0A r D t Turn-Off Delay Time 70 R = 6.0 d(off) G t Fall Time 72 R = 10 f D C Input Capacitance 1079 V = 0V iss GS C Output Capacitance 220 pF V = -10V oss DS C Reverse Transfer Capacitance 152 = 1.0MHz rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 2.0 (Body Diode) showing the G I Pulsed Source Current integral reverse SM 45 (Body Diode) p-n junction diode. S V Diode Forward Voltage -1.2 V T = 25C, I = -1.6A, V = 0V SD J S GS t Reverse Recovery Time 74 110 ns T = 25C, I = -3.0A rr J F Q Reverse Recovery Charge 45 67 nC di/dt = -100A/s rr Repetitive rating pulse width limited by Surface mounted on FR-4 board, t max. junction temperature. ( See fig. 11 ) Pulse width 400s duty cycle Starting T = 25C, L = 6.8mH J R = 25, I = -3.0A. (See Figure 12) G AS 2 www.irf.com