Product Information

SI1302DL-T1-E3

SI1302DL-T1-E3 electronic component of Vishay

Datasheet
30V 600mA 480mO@10V,600mA 280mW N Channel SC-70-3 MOSFETs ROHS
Surface mount Power MOSFET with up to 130V VDS max and 2.1A ID at VGS 4.5V.
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4082 ea
Line Total: USD 0.41

173246 - Global Stock
Ships to you between
Fri. 17 May to Tue. 21 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5389 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 5
Multiples : 1
5 : USD 0.1948

5820 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1443
6000 : USD 0.1443
12000 : USD 0.1443
15000 : USD 0.1443
45000 : USD 0.1443

5820 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 3000
Multiples : 3000
3000 : USD 0.1649

111 - WHS 4


Ships to you between
Mon. 20 May to Thu. 23 May

MOQ : 5
Multiples : 5
5 : USD 0.3468
50 : USD 0.278
150 : USD 0.2484
500 : USD 0.2116
3000 : USD 0.187
6000 : USD 0.1771

173246 - WHS 5


Ships to you between Fri. 17 May to Tue. 21 May

MOQ : 1
Multiples : 1
1 : USD 0.4082
10 : USD 0.3393
100 : USD 0.2461
500 : USD 0.1978
1000 : USD 0.1656
3000 : USD 0.1438
9000 : USD 0.1403
24000 : USD 0.1368
45000 : USD 0.1334

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
LoadingGif

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Additional Infomation About Product

The Vishay SI1302DL-T1-E3 is a dual N-channel enhancement mode FET designed for high side switching applications. It has a maximum drain-source voltage of 30V and a maximum continuous drain current of 3.5A. It feature low on-resistances (RDSon) for efficient switch operation, as well as low gate threshold voltage (VGSth) for fast switching. It is designed to have improved resilience against power surges, reverse drain-source voltage and electrostatic discharge (ESD). It also has a RoHS compliant lead-free construction and is packaged in a leadless SOIC-8 (Surface-Mount) package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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