SI1902CDL-T1-BE3 Vishay

SI1902CDL-T1-BE3 electronic component of Vishay
SI1902CDL-T1-BE3 Vishay
SI1902CDL-T1-BE3 MOSFETs
SI1902CDL-T1-BE3  Semiconductors
Images are for reference only, See Product Specifications

X-On Electronics has gained recognition as a prominent supplier of SI1902CDL-T1-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI1902CDL-T1-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No. SI1902CDL-T1-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: Mosfet Array 2 N-Channel (Dual) 20V 1A (Ta), 1.1A (Tc) 300mW (Ta), 420mW (Tc) Surface Mount SC-70-6
Datasheet: SI1902CDL-T1-BE3 Datasheet (PDF)
Price (USD)
1: USD 0.6125 ea
Line Total: USD 0.61 
Availability : 39788
  
Ship by Wed. 30 Jul to Fri. 01 Aug
QtyUnit Price
1$ 0.6125
10$ 0.375
100$ 0.2208
500$ 0.1628
1000$ 0.1419
3000$ 0.1221
6000$ 0.1155
9000$ 0.1067
24000$ 0.1067

Availability 39788
Ship by Wed. 30 Jul to Fri. 01 Aug
MOQ : 1
Multiples : 1
QtyUnit Price
1$ 0.6125
10$ 0.375
100$ 0.2208
500$ 0.1628
1000$ 0.1419
3000$ 0.1221
6000$ 0.1155
9000$ 0.1067
24000$ 0.1067

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Hts Code
LoadingGif
 
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We are delighted to provide the SI1902CDL-T1-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI1902CDL-T1-BE3 and other electronic components in the MOSFETs category and beyond.

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Si1902CDL www.vishay.com Vishay Siliconix Dual N-Channel 20 V (D-S) MOSFET FEATURES SC-70 (6 leads) TrenchFET power MOSFET SOT-363 Dual S 2 100 % R tested g 4 G 2 Material categorization: 5 D 1 for definitions of compliance please see 6 www.vishay.com/doc 99912 APPLICATIONS 3 D 2 2 Load switch an d D 2 D 1 G 1 1 DC/DC converter for S 1 portable devices Top View High speed switching Marking code: PE G G 1 2 PRODUCT SUMMARY V (V) 20 DS R max. ( ) at V = 4.5 V 0.235 DS(on) GS S S 1 2 R max. ( ) at V = 2.5 V 0.306 DS(on) GS N-Channel N-Channel Q typ. (nC) 0.9 MOSFET MOSFET g a I (A) 1.1 D Configuration Dual ORDERING INFORMATION Package SC-70 Lead (Pb)-free and halogen-free Si1902CDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A PARAMETER SYMBOL LIMIT UNIT Drain-source voltage V 20 DS V Gate-source voltage V 12 GS T = 25 C 1.1 C T = 70 C 0.9 C Continuous drain current (T = 150 C) I J D b, c T = 25 C 1 A b, c T = 70 C 0.8 A A Pulsed drain current (t = 300 s) I 2 DM T = 25 C 0.35 C Continuous source-drain diode current I S b, c T = 25 C 0.25 A T = 25 C 0.42 C T = 70 C 0.27 C Maximum power dissipation P W D b, c T = 25 C 0.30 A b, c T = 70 C 0.23 A Operating junction and storage temperature range T , T -55 to +150 C J stg THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT b, d Maximum junction-to-ambient t 5 s R 290 350 thJA C/W Maximum junction-to-foot (drain) Steady state R 250 300 thJF Notes a. Based on T = 25 C C b. Surface mounted on 1 x 1 FR4 board c. t = 5 s d. Maximum under steady state conditions is 410 C/W S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 1 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si1902CDL www.vishay.com Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 20 - - V DS GS D V temperature coefficient V /T -25 - DS DS J I = 250 A mV/C D V temperature coefficient V /T --2.6 - GS(th) GS(th) J Gate-source threshold voltage V V = V , I = 250 A 0.6 - 1.5 V GS(th) DS GS D Gate-source leakage I V = 0 V, V = 12 V - - 100 nA GSS DS GS V = 20 V, V = 0 V - - 1 DS GS Zero gate voltage drain current I A DSS V = 20 V, V = 0 V, T = 85 C - - 10 DS GS J a On-state drain current I V 5 V, V = 4.5 V 2 - - A D(on) DS GS V = 4.5 V, I = 1 A - 0.195 0.235 GS D a Drain-source on-state resistance R DS(on) V = 2.5 V, I = 0.3 A - 0.255 0.306 GS D Forward transconductance g V = 10 V, I = 1 A - 3 - ms fs DS D b Dynamic Input capacitance C -62 - iss Output capacitance C -2V = 10 V, V = 0 V, f = 1 MHz0- pF oss DS GS Reverse transfer capacitance C -7- rss V = 10 V, V = 10 V, I = 1 A - 2 3 DS GS D Total gate charge Q g -0.9 1.4 nC Gate-source charge Q V = 10 V, V = 4.5 V, I = 1 A -0.2 - gs DS GS D Gate-drain charge Q -0.2- gd Gate resistance R f = 1 MHz 2.4 12 24 g Turn-on delay time t -4 8 d(on) Rise time t -13 20 r V = 10 V, R = 12.5 DD L I 0.8 A, V = 10 V, R = 1 Turn-off delay time t -1D GEN g 120 d(off) Fall time t -9 18 f Turn-on delay time t -6 12 d(on) Rise time t -16 24 ns r V = 10 V, R = 12.5 DD L I 0.8 A, V = 4.5 V, R = 1 Turn-off delay time t D GEN g -13 20 d(off) Fall time t -10 20 f Drain-Source Body Diode Characteristics Continuous source-drain diode current I T = 25 C - - 0.35 S C A a Pulse diode forward current I -- 2 SM Body diode voltage V I = 0.8 A - 0.8 1.2 V SD S Body diode reverse recovery time t -2 4 nC rr Body diode reverse recovery charge Q -8 16 rr I = 0.8 A, di/dt = 100 A/s F Reverse recovery fall time t -5 - ns a Reverse recovery rise time t -3 - b Notes a. Pulse test pulse width 300 s, duty cycle 2% b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S20-0818-Rev. C, 26-Oct-2020 Document Number: 67876 2 For technical questions, contact: pmostechsupport vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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