X-On Electronics has gained recognition as a prominent supplier of SI2318DS-T1-E3 MOSFET across the USA, India, Europe, Australia, and various other global locations. SI2318DS-T1-E3 MOSFET are a product manufactured by Vishay. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

SI2318DS-T1-E3 Vishay

SI2318DS-T1-E3 electronic component of Vishay
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See Product Specifications
Part No.SI2318DS-T1-E3
Manufacturer: Vishay
Category: MOSFET
Description: 40V 3A 750mW 45mO@10V,3.9A N Channel SOT-23 MOSFETs ROHS
High-voltage, fast-switching N-channel power MOSFET in TO-220 package.
Datasheet: SI2318DS-T1-E3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4956 ea
Line Total: USD 0.5

Availability - 231673
Ships to you between
Fri. 28 Jun to Tue. 02 Jul
MOQ: 1  Multiples: 1
Pack Size: 1

SI2318DS-T1-E3 More Buying Options & Price Grid(s)
Availability Price Quantity
5820 - WHS 1


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1833
6000 : USD 0.1833
9000 : USD 0.1833
15000 : USD 0.1833
30000 : USD 0.1833

20370 - WHS 2


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.1996

11125 - WHS 3


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 1
Multiples : 1
1 : USD 0.7059
25 : USD 0.5967
50 : USD 0.5109
100 : USD 0.4251
250 : USD 0.3796

663 - WHS 4


Ships to you between
Mon. 01 Jul to Thu. 04 Jul

MOQ : 1
Multiples : 1
1 : USD 0.4079
10 : USD 0.3292
30 : USD 0.2933
100 : USD 0.2502
500 : USD 0.2313
1000 : USD 0.2199

231673 - WHS 5


Ships to you between Fri. 28 Jun to Tue. 02 Jul

MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.414
100 : USD 0.2967
500 : USD 0.2392
1000 : USD 0.2001
3000 : USD 0.1737
9000 : USD 0.1725
24000 : USD 0.1691
45000 : USD 0.1667

2910 - WHS 6


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 3000
Multiples : 3000
3000 : USD 0.2089

2040 - WHS 7


Ships to you between Mon. 24 Jun to Fri. 28 Jun

MOQ : 1000
Multiples : 1
1000 : USD 0.2007

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Series
Transistor Type
Width
Forward Transconductance - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
LoadingGif
 
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We are delighted to provide the SI2318DS-T1-E3 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI2318DS-T1-E3 and other electronic components in the MOSFET category and beyond.

Additional Infomation About Product

The SI2318DS-T1-E3 is a N-Channel Power Mosfet from Vishay's Power MOSFET product line. It is a logic level transistor with a maximum current drain of 36A, to be used in applications such as power switching and light dimming. Its gate-source-drain breakdown voltage is 20V, and the on-state resistance (RDS(ON)) is 0.042 ohms at 10V. This device is available in the TO-220-3 (TAB) package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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