Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available V (V) R ()I (A) DS DS(on) D Pb-free TrenchFET Power MOSFETs: 1.8 V Rated 0.050 at V = - 4.5 V - 3.85 GS Available - 12 0.065 at V = - 2.5 V - 3.4 GS RoHS* COMPLIANT 0.100 at V = - 1.8V - 2.7 GS TO-236 (SOT-23) G 1 3 D S 2 Top View Si2315BDS *(M5) * Marking Code Ordering Information: Si2315BDS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free) Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 12 DS V Gate-Source Voltage V 8 GS T = 25 C - 3.85 - 3.0 A a I Continuous Drain Current (T = 150 C) D J T = 70 C - 3.0 - 2.45 A A a I - 12 Pulsed Drain Current DM a I - 1.0 - 0.62 Continuous Source Current (Diode Conduction) S T = 25 C 1.19 0.75 A a P W Power Dissipation D T = 70 C 0.76 0.48 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typ.Max.Unit t 5 s 85 105 a R Maximum Junction-to-Ambient thJA Steady State 130 166 C/W R Maximum Junction-to-Foot (Drain) Steady State 60 75 thJF Notes: a. Surface Mounted on FR4 board. b. t 5 s. For SPICE model information via the Worldwide Web: Si2315BDS Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Limits Unit Parameter Symbol Test Conditions Min. Typ. Max. Static V V = 0 V, I = - 10 A Drain-Source Breakdown Voltage - 12 (BR)DSS GS D V V V = V , I = - 250 A Gate-Threshold Voltage - 0.45 - 0.90 GS(th) DS GS D I V = 0 V, V = 8 V Gate-Body Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J V - 5 V, V = - 4.5 V - 6 DS GS a I A On-State Drain Current D(on) V - 5 V, V = - 2.5 V - 3 DS GS V = - 4.5 V, I = - 3.85 A 0.040 0.050 GS D a R V = - 2.5 V, I = - 3.4 A 0.050 0.065 Drain-Source On Resistance DS(on) GS D V = - 1.8 V, I = - 2.7 A 0.071 0.100 GS D a g V = - 5 V, I = - 3.85 A 7S Forward Transconductance fs DS D a V I = - 1.6 A, V = 0 V - 1.2 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 815 g V = - 6 V, V = - 4.5 V DS GS Q Gate-Source Charge 1.1 nC gs I - 3.85 A D Q Gate-Drain Charge 2.3 gd C Input Capacitance 715 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 275 pF oss DS GS C Reverse Transfer Capacitance 200 rss b Switching t 15 20 d(on) Turn-On Time V = - 6 V, R = 6 DD L t 35 50 r I - 1.0 A, V = - 4.5 V ns D GEN t 50 70 d(off) R = 6 G Turn-Off Time t 50 75 f Notes: a. For DESIGN AID ONLY, not subject to production testing. b. Pulse test: PW 300 s duty cycle 2 %. c. Switching time is essentially independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 72014 2 S-80642-Rev. E, 24-Mar-08