Si3499DV Vishay Siliconix P-Channel 1.5 V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.023 at V = - 4.5 V - 7 GS TrenchFET Power MOSFET: 1.5 V Rated 0.029 at V = - 2.5 V - 6.2 GS Ultra-Low On-Resistance - 8 28 0.036 at V = - 1.8 V - 5.2 GS 100 % R Tested g 0.048 at V = - 1.5 V - 5 Compliant to RoHS Directive 2002/95/EC GS APPLICATIONS Load Switch for Portable Devices TSOP-6 Top View 1 6 (4) S 3 mm 5 2 (3) G 3 4 2.85 mm Ordering Information: Si3499DV-T1-E3 (Lead (Pb)-free) (1, 2, 5, 6) D Si3499DV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET Marking Code: 99xxx ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol 5 s Steady State Unit V Drain-Source Voltage - 8 DS V V Gate-Source Voltage 5 GS T = 25 C - 7 - 5.3 A a I Continuous Drain Current (T = 150 C) D J T = 85 C - 3.6 - 3.9 A A I Pulsed Drain Current - 20 DM a I - 1.7 - 0.9 Continuous Source Current (Diode Conduction) S T = 25 C 21.1 A a P W Maximum Power Dissipation D T = 85 C 10.6 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 5 s 45 62.5 a R Maximum Junction-to-Ambient thJA Steady State 90 110 C/W R Maximum Junction-to-Foot (Drain) Steady State 25 30 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. Document Number: 73138 www.vishay.com S11-1140-Rev. C, 13-Jun-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000Si3499DV Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static V V = V , I = - 250 A Gate Threshold Voltage - 0.35 - 0.75 V GS(th) DS GS D I V = 0 V, V = 5 V Gate-Body Leakage 100 nA GSS DS GS V = - 8 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 8 V, V = 0 V, T = 85 C - 10 DS GS J a I V = - 5 V, V = - 4.5 V - 20 A On-State Drain Current D(on) DS GS V - 4.5 V, I = - 7 A 0.019 0.023 GS D V = - 2.5 V, I = - 6.2 A 0.024 0.029 GS D a R Drain-Source On-State Resistance DS(on) V = - 1.8 V, I = - 5.2 A 0.028 0.036 GS D V = - 1.5 V, I = - 3 A 0.035 0.048 GS D a g V = - 5 V, I = - 7 A 28 S Forward Transconductance fs DS D a V I = - 1.7 A, V = 0 V - 0.63 - 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 28 42 g Q V = - 4 V, V = - 4.5 V, I = - 7 A Gate-Source Charge 2.9 nC gs DS GS D Gate-Drain Charge Q 5.8 gd R Gate Resistance 48.5 13 g Turn-On Delay Time t 27 40 d(on) t Rise Time V = - 4 V, R = 4 65 100 r DD L - 1 A, V = - 4.5 V, R = 6 I Turn-Off Delay Time t 210 315 ns d(off) D GEN g t Fall Time 110 165 f t I = - 1.7 A, dI/dt = 100 A/s Source-Drain Reverse Recovery Time 40 70 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 30 30 V = 5 V thru 2 V GS 25 25 20 20 1.5 V 15 15 10 10 T = 125 C C 5 5 25 C 1 V - 55 C 0 0 0 1234 5 0.0 0.4 0.8 1.2 1.6 2.0 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) GS DS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 73138 2 S11-1140-Rev. C, 13-Jun-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Drain Current (A) D I - Drain Current (A) D