X-On Electronics has gained recognition as a prominent supplier of SI3493BDV-T1-BE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI3493BDV-T1-BE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SI3493BDV-T1-BE3 Vishay

SI3493BDV-T1-BE3 electronic component of Vishay
SI3493BDV-T1-BE3 Vishay
SI3493BDV-T1-BE3 MOSFETs
SI3493BDV-T1-BE3  Semiconductors

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See Product Specifications
Part No. SI3493BDV-T1-BE3
Manufacturer: Vishay
Category: MOSFETs
Description: MOSFET P-CHANNEL 20-V (D-S)
Datasheet: SI3493BDV-T1-BE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.0987 ea
Line Total: USD 1.1 
Availability - 16927
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
16927
Ship by Wed. 11 Jun to Fri. 13 Jun
MOQ : 1
Multiples : 1
1 : USD 1.0987
10 : USD 0.7488
100 : USD 0.5137
500 : USD 0.4455
1000 : USD 0.3751
3000 : USD 0.3575
6000 : USD 0.3564

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Hts Code
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We are delighted to provide the SI3493BDV-T1-BE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI3493BDV-T1-BE3 and other electronic components in the MOSFETs category and beyond.

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Si3493BDV Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R () Q (Typ.) I (A) DS DS(on) g D Definition a 0.0275 at V = - 4.5 V TrenchFET Power MOSFET GS - 8.0 PWM Optimized - 20 0.034 at V = - 2.5 V - 7.9 26.2 nC GS 100 % R Tested g 0.045 at V = - 1.8 V - 2.2 GS Compliant to RoHS Directive 2002/95/EC APPLICATIONS TSOP-6 Top View Load Switch PA Switch (4) S 1 6 Battery Switch 3 mm 5 2 Marking Code (3) G AK XXX 3 4 Lot Traceability and Date Code Part Code 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3493BDV-T1-E3 (Lead (Pb)-free) Si3493BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol Limit Unit Drain-Source Voltage V - 20 DS V Gate-Source Voltage V 8.0 GS a T = 25 C - 8.0 C T = 70 C - 7.03 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C - 7.0 A b, c T = 70 C A - 5.8 A Pulsed Drain Current I - 25 DM T = 25 C - 2.48 C Continuous Source-Drain Diode Current I S b, c T = 25 C - 1.73 A T = 25 C 2.97 C T = 70 C 1.9 C Maximum Power Dissipation P W D b, c T = 25 C 2.08 A b, c T = 70 C 1.33 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, d t 5 s R 50 60 Maximum Junction-to-Ambient thJA C/W Maximum Junction-to-Foot (Drain) Steady State R 35 42 thJF Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 90 C/W. Document Number: 74478 www.vishay.com S09-1399-Rev. B, 20-Jul-09 1Si3493BDV Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 20 V DS GS D V Temperature Coefficient V /T -14.1 DS DS J I = - 250 A D mV/C V Temperature Coefficient V /T 2.85 GS(th) GS(th) J Gate-Source Threshold Voltage V V = V , I = - 250 A - 0.4 - 0.9 V GS(th) DS GS D Gate-Source Leakage I V = 0 V, V = 8 V 100 nA GSS DS GS V = - 20 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I DSS A V = - 20 V, V = 0 V, T = 55 C - 10 DS GS J a On-State Drain Current I V - 5 V, V = - 4.5 V - 25 A D(on) DS GS V = - 4.5 V, I = - 7 A 0.023 0.0275 GS D a Drain-Source On-State Resistance R V = - 2.5 V, I = - 3.5 A 0.0284 0.034 DS(on) GS D V = - 1.8 V, I = - 2.2 A 0.0347 0.045 GS D a Forward Transconductance g V = 10 V, I = - 7 A 24.3 S fs DS D b Dynamic Input Capacitance C 1805 iss Output Capacitance C 285V = - 10 V, V = 0 V, f = 1 MHz pF oss DS GS Reverse Transfer Capacitance C 245 rss V = - 10 V, V = - 5.0 V, I = - 7 A 29 43.5 DS GS D Total Gate Charge Q g 26.2 39.3 nC Gate-Source Charge Q 1.45V = - 10 V, V = - 4.5 V, I = - 7 A gs DS GS D Gate-Drain Charge Q 7.14 gd Gate Resistance R f = 1 MHz 6.5 10 g Turn-On Delay Time t 22 33 d(on) Rise Time t 72108 r V = - 10 V, R = 2.0 ns DD L Turn-Off Delay Time t 75113 d(off) I - 5.0 A, V = - 4.5 V, R = 1 D GEN g Fall Time t 84 126 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C - 2.48 S C A a Pulse Diode Forward Current I - 25 SM Body Diode Voltage V I = - 2.5 A - 0.8 - 1.2 V SD S Body Diode Reverse Recovery Time t 52 78 ns rr Body Diode Reverse Recovery Charge Q 49.5 74.3 nC rr I = 2.1 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 23.5 a ns Reverse Recovery Rise Time t 28.5 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 % b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 74478 2 S09-1399-Rev. B, 20-Jul-09

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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