Si4483ADY Vishay Siliconix P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 d V (V) R ( )I (A) Q (Typ.) DS DS(on) D g Definition 0.0088 at V = - 10 V - 19.2 GS TrenchFET Power MOSFET - 30 44.8 nC 0.0153 at V = - 4.5 V - 14.6 GS 100 % R Tested g 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S SO-8 Adaptor Switch S 1 8 D S D 2 7 G S 3 6 D G D 4 5 Top View D Ordering Information: Si4483ADY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) A Parameter Symbol Limit Unit Drain-Source Voltage V - 30 DS V V Gate-Source Voltage 25 GS T = 25 C - 19.2 C T = 70 C - 15.4 C Continuous Drain Current (T = 150 C) I J D a, b T = 25 C - 13.5 A a, b T = 70 C - 10.9 A A I - 70 Pulsed Drain Current DM - 4.9 = 25 C T C Continuous Source-Drain Diode Current I S a, b T = 25 C - 2.4 A I Avalanche Current 20 AS L = 0.1 mH Single-Pulse Avalanche Energy E 20 mJ AS T = 25 C 5.9 C T = 70 C 3.8 C Maximum Power Dissipation P W D a, b T = 25 C 2.9 A a, b T = 70 C 1.9 A Operating Junction and Storage Temperature Range T , T - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit a, c R Maximum Junction-to-Ambient t 10 s 33 42 thJA C/W Steady State R Maximum Junction-to-Foot 16 21 thJF Notes: a. Surface mounted on 1 x 1 FR4 board. b. t = 10 s. c. Maximum under steady state conditions is 85 C/W. d. Based on T = 25 C. C Document Number: 68982 www.vishay.com S10-2543-Rev. B, 08-Nov-10 1Si4483ADY Vishay Siliconix SPECIFICATIONS (T = 25 C, unless otherwise noted) J Parameter Symbol Test Conditions Min. Typ.Max.Unit Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 30 V DS GS D V Temperature Coefficient V /T - 30 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 5.3 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 1.2 - 2.1 - 2.6 V GS(th) DS GS D I V = 0 V, V = 25 V Gate-Source Leakage 100 nA GSS DS GS V = - 30 V, V = 0 V - 1 DS GS I Zero Gate Voltage Drain Current A DSS V = - 30 V, V = 0 V, T = 55 C - 5 DS GS J a I V - 10 V, V = - 10 V - 30 A On-State Drain Current D(on) DS GS V = - 10 V, I = - 10 A 0.0073 0.0088 GS D a R Drain-Source On-State Resistance DS(on) V = - 4.5 V, I = - 7 A 0.0127 0.0153 GS D a g V = - 10 V, I = - 10 A 32 S Forward Transconductance fs DS D b Dynamic C Input Capacitance 3900 iss C V = - 15 V, V = 0 V, f = 1 MHz Output Capacitance 715 pF oss DS GS C Reverse Transfer Capacitance 645 rss V = - 15 V, V = - 10 V, I = - 10 A 90 135 DS GS D Q Total Gate Charge g 44.8 68 nC Q V = - 15 V, V = - 4.5 V, I = - 10 A Gate-Source Charge 12.2 gs DS GS D Q Gate-Drain Charge 21.7 gd R Gate Resistance f = 1 MHz 0.4 1.8 3.6 g Turn-On Delay Time t 14 28 d(on) t Rise Time V = - 15 V, R = 1.5 13 25 r DD L I - 10 A, V = - 10 V, R = 1 t Turn-Off DelayTime D GEN g 49 90 d(off) Fall Time t 13 25 f ns t Turn-On Delay Time 70 120 d(on) Rise Time t 150 280 V = - 15 V, R = 1.5 r DD L I - 10 A, V = - 4.5 V, R = 1 t Turn-Off DelayTime D GEN g 43 80 d(off) t Fall Time 28 55 f Drain-Source Body Diode Characteristics Continous Source-Drain Diode Current I T = 25 C - 4.9 S C A Pulse Diode Forward Current I - 70 SM Body Diode Voltage V I = - 3 A, V = 0 V - 0.72 - 1.2 V SD S GS Body Diode Reverse Recovery Time t 41 70 ns rr Body Diode Reverse Recovery Charge Q 41 70 nC rr I = - 10 A, dI/dt = 100 A/s, T = 25 C F J Reverse Recovery Fall Time t 18 a ns Reverse Recovery Rise Time t 23 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68982 2 S10-2543-Rev. B, 08-Nov-10