SI4880DY-T1-E3 Vishay

SI4880DY-T1-E3 electronic component of Vishay

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X-On Electronics has gained recognition as a prominent supplier of SI4880DY-T1-E3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SI4880DY-T1-E3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

Part No.	SI4880DY-T1-E3
Manufacturer:	Vishay
Category:	MOSFETs
Description:	MOSFET 30V 13A 2.5W 2 A, 48 V Low Side Non-Auto-Recoverable Over-Temperature FET.
Datasheet:	SI4880DY-T1-E3 Datasheet (PDF)

Price (USD)

2500: USD 1.4157 ea
Line Total: USD 3539.25

Availability : 0

Qty	Unit Price
2500	$ 1.4157

SI4880DY-T1-E3 More Buying Options & Price Grid(s)

Availability

Price (USD)

Quantity

Availability 0

Ship by Tue. 12 Aug to Mon. 18 Aug

MOQ : 2500
Multiples : 1

Qty	Unit Price
2500	$ 1.4157

We are delighted to provide the SI4880DY-T1-E3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SI4880DY-T1-E3 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

The SI4880DY-T1-E3 is a monolithic CMOS integrated circuit manufactured by Vishay. It is an RF amplifier that operates in the frequency range of 0.1 to 1000 MHz, and has a typical gain of 14 dB. It is designed for broadband use and can be used in television and radio transmitters, as well as wireless and mobile communication systems. The SI4880DY-T1-E3 features low noise and high power gain, and is able to operate over a wide temperature range (- 40 to + 85 °C). The device is housed in a hermetically sealed SOT-89 package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Manufacturer Vishay Vishay
Product Category MOSFETs MOSFETs
RoHS - XON e e
Id - Continuous Drain Current 13 A 13 A
Vds - Drain-Source Breakdown Voltage 30 V 30 V
Rds On - Drain-Source Resistance 8.5 mOhms 8.5 mOhms
Transistor Polarity n - channel n - channel
Vgs - Gate-Source Breakdown Voltage 25 V 25 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 2.5 W 2.5 W
Mounting Style smd/smt smd/smt
Package / Case SOIC - 8 Narrow SOIC - 8 Narrow
Packaging Reel Reel
Qg - Gate Charge 25 nC 25 nC
Channel Mode enhancement enhancement
Configuration single single
Brand Vishay / Siliconix Vishay / Siliconix
Fall Time 30 ns 30 ns
Rise Time 9 ns 9 ns
Factory Pack Quantity : 2500 2500
Typical Turn-Off Delay Time 46 ns 46 ns