Si4896DY Vishay Siliconix N-Channel 80-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) DS DS(on) D Definition 0.0165 at V = 10 V 9.5 GS TrenchFET Power MOSFETs 80 0.022 at V = 6.0 V 8.3 GS Compliant to RoHS Directive 2002/95/EC D SO-8 S D 1 8 S D 2 7 G S D 3 6 G D 4 5 Top View S Ordering Information: Si4896DY-T1-E3 (Lead (Pb)-free) N-Channel MOSFET Si4896DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol 10 sSteady State Unit V Drain-Source Voltage 80 DS V V Gate-Source Voltage 20 GS T = 25 C 9.5 6.7 A a I Continuous Drain Current (T = 150 C) D J T = 70 C 7.6 5.4 A Pulsed Drain Current I 50 A DM I Avalanche Current L = 0.1 mH 40 AS a I 2.8 1.4 Continuous Source Current (Diode Conduction) S T = 25 C 3.1 1.56 A a P W Maximum Power Dissipation D T = 70 C 2.0 1.0 A T , T Operating Junction and Storage Temperature Range - 55 to 150 C J stg THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit t 10 s 33 40 a R Maximum Junction-to-Ambient thJA Steady State 65 80 C/W R Maximum Junction-to-Foot (Drain) Steady State 17 21 thJF Notes: a. Surface Mounted on 1 x 1 FR4 board. Document Number: 71300 www.vishay.com S09-0870-Rev. C, 18-May-09 1Si4896DY Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = V , I = 250 A Gate Threshold Voltage 2.0 V GS(th) DS GS D I V = 0 V, V = 20 V Gate-Body Leakage 100 nA GSS DS GS V = 64 V, V = 0 V 1 DS GS I Zero Gate Voltage Drain Current A DSS V = 64 V, V = 0 V, T = 55 C 5 DS GS J a I V 5 V, V = 10 V 50 A On-State Drain Current D(on) DS GS V = 10 V, I = 10 A 0.0135 0.0165 GS D a R Drain-Source On-State Resistance DS(on) V = 6.0 V, I = 8.0 A 0.0175 0.022 GS D a g V = 15 V, I = 10 A 25 S Forward Transconductance fs DS D a V I = 2.8 A, V = 0 V 0.75 1.1 V Diode Forward Voltage SD S GS b Dynamic Total Gate Charge Q 34 41 g Q V = 40 V, V = 10 V, I = 10 A Gate-Source Charge 7.5 nC gs DS GS D Gate-Drain Charge Q 11.0 gd R Gate Resistance 0.2 0.85 1.2 g Turn-On Delay Time t 17 25 d(on) t Rise Time V = 40 V, R = 40 11 17 r DD L I 1.0 A, V = 10 V, R = 6 Turn-Off Delay Time t 40 60 ns D GEN g d(off) t Fall Time 31 45 f Source-Drain Reverse Recovery Time t I = 2.8 A, dI/dt = 100 A/s 45 75 rr F Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 50 50 V = 10 V thru 6 V GS 40 40 30 30 5 V 20 20 T = 125 C C 10 10 25 C - 55 C 3 V , 4 V 0 0 0 2468 10 0 123 456 V - Drain-to-Source Voltage (V) V - Gate-to-Source Voltage (V) DS GS Output Characteristics Transfer Characteristics www.vishay.com Document Number: 71300 2 S09-0870-Rev. C, 18-May-09 I - Drain Current (A) D I - Drain Current (A) D